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參數(shù)資料
| 型號(hào)： | HGTP5N120BN |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 21A, 1200V, NPT Series N-Channel IGBTs(21A, 1200V NPT系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 21 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-220AB ALTERNATE VERSION, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 82K |
| 代理商： | HGTP5N120BN |
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 5A,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 25
,
L = 5mH,
Test Circuit (Figure 18)
-
22
25
ns
Current Rise Time
t
rI
-
15
20
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
160
180
ns
Current Fall Time
t
fI
-
130
160
ns
Turn-On Energy (Note 4)
E
ON1
-
220
-
μ
J
Turn-On Energy (Note 4)
E
ON2
-
450
600
μ
J
Turn-Off Energy (Note 5)
E
OFF
-
390
450
μ
J
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C,
I
CE
= 5A,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 25
,
L = 5mH,
Test Circuit (Figure 18)
-
20
25
ns
Current Rise Time
t
rI
-
15
20
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
182
280
ns
Current Fall Time
t
fI
-
175
200
ns
Turn-On Energy (Note 4)
E
ON1
-
220
-
μ
J
Turn-On Energy (Note 4)
E
ON2
-
1000
1300
μ
J
Turn-Off Energy (Note 5)
E
OFF
-
560
800
μ
J
Thermal Resistance Junction To Case
R
θ
JC
-
-
0.75
o
C/W
NOTES:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 18.
5. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
25
75
100
125
150
5
10
15
25
20
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
0
I
C
,
600
800
400
200
1000
1200
0
T
J
= 150
o
C, R
G
= 25
, V
GE
= 15V, L = 5mH
5
10
15
20
25
30
35
HGTP5N120BN, HGT1S5N120BNS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP5N120BND | 功能描述:IGBT 晶體管 21a 1200V IGBT NPT Series N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP5N120CN | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP5N120CND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP5N120CNS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
| HGTP5N120CNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
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