參數資料
型號： HIP6601ACB-T
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： Synchronous Rectified Buck MOSFET Drivers
中文描述： 0.73 A HALF BRDG BASED MOSFET DRIVER, PDSO8
封裝： PLASTIC, MS-012AA, SOIC-8
文件頁數： 3/8頁
文件大?。?/td> 84K
代理商： HIP6601ACB-T
3
Absolute Maximum Ratings
Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (V
BOOT
- V
PHASE
). . . . . . . . . . . . . . . . . . . . . . . .15V
Input Voltage (V
PWM
) . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V
UGATE. . . . . . . . . . . . . . . . . . . . . .V
PHASE
- 0.3V to V
BOOT
+ 0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to V
PVCC
+ 0.3V
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3015.7) . . . . .3kV
Machine Model (Per EIAJ ED-4701 Method C-111). . . . . . . .200V
Operating Conditions
Ambient Temperature Range. . . . . . . . . . . . . . . . . . . . .0
o
C to 85
o
C
Maximum Operating Junction Temperature. . . . . . . . . . . . . . 125
o
C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
±
10%
Supply Voltage Range, PVCC . . . . . . . . . . . . . . . . . . . . .5V to 12V
Thermal Resistance
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
o
C
Maximum Storage Temperature Range. . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300
o
C
(SOIC - Lead Tips Only)
θ
JA
(
o
C/W)
113
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC SUPPLY CURRENT
Bias Supply Current
I
VCC
HIP6601, f
PWM
= 1MHz, V
PVCC
= 12V
HIP6603, f
PWM
= 1MHz, V
PVCC
= 12V
HIP6601, f
PWM
= 1MHz, V
PVCC
= 12V
HIP6603, f
PWM
= 1MHz, V
PVCC
= 12V
-
4.4
6.2
mA
-
2.5
3.6
mA
Power Supply Current
I
PVCC
-
200
430
μ
A
-
1.8
3.3
mA
POWER-ON RESET
VCC Rising Threshold
9.7
9.9
10.0
V
VCC Falling Threshold
9.0
9.1
9.2
V
PWM INPUT
Input Current
I
PWM
V
PWM
= 0 or 5V (See Block Diagram)
-
500
-
μ
A
PWM Rising Threshold
3.6
3.7
-
V
PWM Falling Threshold
-
1.3
1.4
V
UGATE Rise Time
TR
UGATE
TR
LGATE
TF
UGATE
TF
LGATE
TPDL
UGATE
TPDL
LGATE
V
PVCC
= V
VCC
= 12V, 3nF load
V
PVCC
= V
VCC
= 12V, 3nF load
V
PVCC
= V
VCC
= 12V, 3nF load
V
PVCC
= V
VCC
= 12V, 3nF load
V
VCC
= V
PVCC
= 12V, 3nF load
V
VCC
= V
PVCC
= 12V, 3nF load
-
20
-
ns
LGATE Rise Time
-
50
-
ns
UGATE Fall Time
-
20
-
ns
LGATE Fall Time
-
20
-
ns
UGATE Turn-Off Propagation Delay
-
30
-
ns
LGATE Turn-Off Propagation Delay
-
20
-
ns
Shutdown Window
1.5
-
3.6
V
Shutdown Holdoff Time
-
230
-
ns
OUTPUT
Upper Drive Source Impedance
R
UGATE
V
VCC
= 12V, V
PVCC
= 5V
V
VCC
= V
PVCC
= 12V
V
VCC
= 12V, V
PVCC
= 5V
V
VCC
= 12V, V
PVCC
= 12V
V
VCC
= 12V, V
PVCC
= 5V
V
VCC
= 12V, V
PVCC
= 12V
V
VCC
= V
PVCC
= 12V
-
2.5
3.0
-
7.0
7.5
Upper Drive Sink Impedance
R
UGATE
-
2.3
2.8
-
1.0
1.3
Lower Drive Source Impedance
R
LGATE
-
4.5
5.0
-
9.0
9.5
Lower Drive Sink Impedance
R
LGATE
-
1.5
2.9
HIP6601, HIP6603
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相關代理商/技術參數
參數描述
HIP6601B 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Synchronous Rectified Buck MOSFET Drivers
HIP6601BCB 功能描述:IC DRIVER MOSFET DUAL 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應商設備封裝:TO-263 包裝:管件
HIP6601BCB-T 功能描述:IC DRVR MOSFET SYNC BUCK 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應商設備封裝:TO-263 包裝:管件
HIP6601BCBZ 功能描述:功率驅動器IC SYNCH-RECT BUCK FET DRVR W/REDUCED POR RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
HIP6601BCBZ 制造商:Intersil Corporation 功能描述:MOSFET Driver IC
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