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參數(shù)資料
| 型號(hào)： | HS-22620RH |
| 廠商： | Intersil Corporation |
| 英文描述： | Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier(抗輻射寬帶、高非補(bǔ)償輸入阻抗運(yùn)算放大器) |
| 中文描述： | 拉德硬雙路，寬帶，高輸入阻抗未補(bǔ)償運(yùn)算放大器（抗輻射寬帶，高非補(bǔ)償輸入阻抗運(yùn)算放大器） |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | HS-22620RH |
4
Die Characteristics
DIE DIMENSIONS:
145 mils x 116 mils x 19 mils
±
1 mil
3670
μ
m x 2950
μ
m x 483
μ
m
±
25.4
μ
m
INTERFACE MATERIALS:
Glassivation:
Type: Nitride (S13N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12k
±
2k
Nitride Thickness: 3.5k
±
1.5k
Top Metallization:
Type: Al, 1% Cu
Thickness: 14k
±
2k
Substrate:
Bipolar Bonded Wafer (EBHF)
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
Unbiased Silicon
(WEB pad provided for substrate tie-off.)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2 x 10
5
A/cm
2
Transistor Count:
184
Metallization Mask Layout
HS-22620RH
(16) OUTA
(15) COMPA
(14) WEB
(13) COMPB
(12) OUTB
(11)
VEEB
(10)
VCCB
(9)
BAL2B
(8)
BAL1B
+INA (3)
-INA (4)
-INB (6)
+INB (7)
BAL1A
(2)
BAL2A
(1)
VCCA
(18)
VEEA
(17)
HS-22620RH
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