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參數(shù)資料
| 型號： | HS1-6254RH |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened Ultra High Frequency NPN Transistor Array |
| 中文描述： | 輻射加固超高頻NPN晶體管陣列 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 31K |
| 代理商： | HS1-6254RH |
1
File Number
4425.2
HS-6254RH
Radiation Hardened Ultra High Frequency
NPN Transistor Array
The HS-6254RH is a Radiation Hardened array of five NPN
transistors on a common substrate. One of our bonded
wafer, dielectrically isolated fabrication processes provides
an immunity to Single Event Latch-up and the capability of
highly reliable performance in any radiation environment.
The high F
T
(8GHz) and low noise figure (3.5dB) of these
transistors make them ideal for use in high frequency
amplifier and mixer applications. Monolithic construction of
the five transistors provides the closest electrical and
thermal matching possible. Access is provided to each
terminal of the transistors for maximum application flexibility.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-97641. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Pinouts
HS1-6254RH (CERDIP) GDIP1-T16 OR
HS1-6254RH (SBDIP) CDIP2-T16
TOP VIEW
HS9-6254RH (FLATPACK) CDFP4-F16
TOP VIEW
Features
Electrically Screened to SMD # 5962-97641
QML Qualified per MIL-PRF-38535 Requirements
Radiation Environment
- Gamma Dose (
γ
) . . . . . . . . . . . . . . . . . 3 x 10
5
RAD(Si)
- SEL Immune. . . . . . . Bonded Wafer Dielectric Isolation
Gain Bandwidth Product (F
T
). . . . . . . . . . . . . .8GHz (Typ)
Current Gain (h
FE
) . . . . . . . . . . . . . . . . . . . . . . . . 70 (Typ)
Early Voltage (V
A
). . . . . . . . . . . . . . . . . . . . . . . . 50V (Typ)
Noise Figure (50
) at 1GHz. . . . . . . . . . . . . . .3.5dB (Typ)
Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ)
Applications
High Frequency Amplifiers and Mixers
- Refer to Application Note 9315
High Frequency Converters
Synchronous Detectors
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
Q1C
Q2C
Q2E
Q2B
NC
Q3C
Q3B
Q3E
Q1E
Q5B
Q5E
Q5C
Q4C
Q4E
Q4B
Q1B
Q1
Q2
Q3
Q4
Q5
Q1C
Q2C
Q2E
Q2B
NC
Q3C
Q3E
Q3B
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
Q1E
Q1B
Q5B
Q5E
Q5C
Q4C
Q4E
Q4B
Q1
Q2
Q3
Q4
Q5
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
TEMP.RANGE
(
o
C)
HS0-6254RH-Q
HS0-6254RH-Q
25
5962F9764101VEA
HS1-6254RH-Q
-55 to 125
5962F9764101VEC
HS1B-6254RH-Q
-55 to 125
5962F9764101VXC
HS9-6254RH-Q
-55 to 125
HS1-6254RH/SAMPLE
HS1-6254RH/SAMPLE
-55 to 125
Data Sheet
August 1999
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HS-6254RH | Radiation Hardened Ultra High Frequency NPN Transistor Array(抗輻射甚高頻NPN晶體管陣列) |
| HS0-6254RH-Q | Radiation Hardened Ultra High Frequency NPN Transistor Array |
| HS1-6254RH-Q | Radiation Hardened Ultra High Frequency NPN Transistor Array |
| HS1B-6254RH-Q | Radiation Hardened Ultra High Frequency NPN Transistor Array |
| HS9-6254RH-Q | Radiation Hardened Ultra High Frequency NPN Transistor Array |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HS1-6254RH/SAMPLE | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:BJT |
| HS1-6254RH-Q | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Ultra High Frequency NPN Transistor Array |
| HS162-C-0304 | 制造商:N/A 功能描述: |
| HS-16-2N | 制造商:Nihon Kaiheiki Ind Co Ltd 功能描述: |
| HS16-2N | 功能描述:SWITCH ROTARY 2DECK 12A NONSHORT RoHS:是 類別:開關(guān) >> 旋轉(zhuǎn) 系列:HS RoHS指令信息:435123-1 Statement of Compliance 產(chǎn)品目錄繪圖:Rotary Switch 特色產(chǎn)品:TE Connectivity Switches 3D 型號:435123-1.pdf 標(biāo)準(zhǔn)包裝:1 系列:6000 位置數(shù):10 層數(shù):1 每層電極數(shù):- 每層電路:BCD 觸點(diǎn)額定電壓:0.125A @ 115VAC 觸動器類型:旋鈕 安裝類型:PCB，通孔 端接類型:PC 引腳 方向:垂直 擺角:36° 產(chǎn)品目錄頁面:2570 (CN2011-ZH PDF) 其它名稱:435123-1-ND450-1183A26201A26201-ND |
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