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參數(shù)資料
| 型號(hào)： | HS1-82C54RH |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened CMOS Programmable Interval Timer |
| 中文描述： | 輻射加固CMOS可編程間隔定時(shí)器 |
| 文件頁數(shù)： | 3/21頁 |
| 文件大?。?/td> | 171K |
| 代理商： | HS1-82C54RH |
950
Specifications HS-82C54RH
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input or Output Voltage
Applied for all Grades. . . . . . . . . . . . . . . . . .VSS-0.3V to VDD+0.3V
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300
o
C
Typical Derating Factor. . . . . . . . . . .2.4mA/MHz Increase in IDDOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
SBDIP Package. . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . .
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.83W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25.0mW/C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .16.7mW/C
θ
JA
θ
JC
6
o
C/W
4
o
C/W
40
o
C/W
60
o
C/W
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range. . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . .0V to +0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . VDD -1.5V to VDD
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
TTL Output High Current
IOH1
VDD = 4.5V, VO = 3.0V,
VIN = 0V or 4.5V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-2.5
-
mA
CMOST Output High
Current
IOH2
VDD = 4.5V, VO = 4.1V,
VIN = 0V or 4.5V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-100
-
μ
A
Output Low Current
IOL
VDD = 4.5V, VO = 0.4V,
VIN = 0V or 4.5V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
2.5
-
mA
Input Leakage Current
IIL or IIH
VDD = 5.5V, VIN = 0V or 5.5V
Pins: 9, 11, 14-16, 18-23
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-1.0
1.0
μ
A
Output Leakage Current
IOZL or
IOZH
VDD = 5.5V, VIN = 0V or 5.5V
Pins: 1-8
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-10
10
μ
A
Standby Power Supply
Current
IDDSB
VDD = 5.5V, VIN = GND or VDD
IO = 0mA, Counters
Programmed
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-
20.0
μ
A
Operating Power Supply
Current
IDDOP
VDD = 5.5V, VIN = GND or VDD
IO = 0mA, CLK0 = CLK1 =
CLK2 = 5MHz
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-
12.0
mA
Functional Tests
FT
VDD = 4.5V and 5.5V,
VIN = GND or VDD, f = 1MHz
7, 8A, 8B
-55
o
C, +25
o
C,
+125
o
C
-
-
-
Noise Immunity
Functional Test
FN
VDD = 5.5V, VIN = GND or
VDD - 1.5 and VDD = 4.5V,
VIN = 0.8V or VDD
7, 8A, 8B
-55
o
C, +25
o
C,
+125
o
C
-
-
-
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
AC’s Tested at Worst Case VDD (s), Guaranteed Over Full Operating Range.
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Address Stable Before RD
TAVRL
VDD = 4.5V
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
75
-
ns
CS Stable Before RD
TSLRL
VDD = 4.5V
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
0
-
ns
Address Hold Time After RD
TRHAX
VDD = 4.5V
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
0
-
ns
RD Pulse Width
TRLRH
VDD = 4.5V
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
240
-
ns
Data Delay from RD
TRLDV
VDD = 4.5V
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
-
200
ns
Spec Number
518059
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HS9-82C54RH | Radiation Hardened CMOS Programmable Interval Timer |
| HS1-82C54RH-8 | Radiation Hardened CMOS Programmable Interval Timer |
| HS9-82C54RH-8 | Radiation Hardened CMOS Programmable Interval Timer |
| HS1-82C54RH-Q | Radiation Hardened CMOS Programmable Interval Timer |
| HS9-82C54RH-Q | Radiation Hardened CMOS Programmable Interval Timer |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HS1-82C54RH/PROTO | 制造商:Intersil Corporation 功能描述:RAD HARD CMOS PROGRAMMABLE INTERVAL TIMER,PROTO,CLASS V - Rail/Tube |
| HS1-82C54RH-8 | 制造商:Intersil Corporation 功能描述:PROGRAMMABLE TIMER SGL 24PIN SBDIP - Rail/Tube |
| HS1-82C54RH-Q | 制造商:Intersil Corporation 功能描述:PROGRAMMABLE TIMER SGL 24PIN SBCDIP - Rail/Tube |
| HS1-82C55ARH | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened CMOS Programmable Peripheral Interface |
| HS1-82C55ARH-8 | 制造商:Intersil Corporation 功能描述:RAD HARD CMOS PROGRAMMABLE PERIPHERAL INTERFACE,DIP,CLS Q - Rail/Tube |
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