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參數(shù)資料
| 型號： | HS9-22620RH-Q |
| 廠商： | INTERSIL CORP |
| 元件分類： | 運(yùn)動控制電子 |
| 英文描述： | Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier |
| 中文描述： | DUAL OP-AMP, 6000 uV OFFSET-MAX, 100 MHz BAND WIDTH, CDFP18 |
| 封裝： | FP-18 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 45K |
| 代理商： | HS9-22620RH-Q |
4
Die Characteristics
DIE DIMENSIONS:
145 mils x 116 mils x 19 mils
±
1 mil
3670
μ
m x 2950
μ
m x 483
μ
m
±
25.4
μ
m
INTERFACE MATERIALS:
Glassivation:
Type: Nitride (S13N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12k
±
2k
Nitride Thickness: 3.5k
±
1.5k
Top Metallization:
Type: Al, 1% Cu
Thickness: 14k
±
2k
Substrate:
Bipolar Bonded Wafer (EBHF)
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
Unbiased Silicon
(WEB pad provided for substrate tie-off.)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2 x 10
5
A/cm
2
Transistor Count:
184
Metallization Mask Layout
HS-22620RH
(16) OUTA
(15) COMPA
(14) WEB
(13) COMPB
(12) OUTB
(11)
VEEB
(10)
VCCB
(9)
BAL2B
(8)
BAL1B
+INA (3)
-INA (4)
-INB (6)
+INB (7)
BAL1A
(2)
BAL2A
(1)
VCCA
(18)
VEEA
(17)
HS-22620RH
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