- 您現在的位置：買賣IC網 > PDF目錄384442 > HS9-80C86RH-Q (INTERSIL CORP) Radiation Hardened 16-Bit CMOS Microprocessor PDF資料下載
參數資料
| 型號： | HS9-80C86RH-Q |
| 廠商： | INTERSIL CORP |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | Radiation Hardened 16-Bit CMOS Microprocessor |
| 中文描述： | 16-BIT, 5 MHz, MICROPROCESSOR, CDFP42 |
| 封裝： | METAL SEALED, CERAMIC, DFP-42 |
| 文件頁數： | 10/37頁 |
| 文件大?。?/td> | 239K |
| 代理商： | HS9-80C86RH-Q |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁當前第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁
865
Spec Number
518055
Specifications HS-80C86RH
Status Inactive Delay
(Note 4)
TCLSH
VDD = 4.75V
9, 10, 11
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
10
130
ns
Address Valid Delay
TCLAV
VDD = 4.75V
9, 10, 11
10
110
ns
RD Active Delay
TCLRL
VDD = 4.75V
9, 10, 11
10
165
ns
RD Inactive Delay
TCLRH
VDD = 4.75V
9, 10, 11
10
150
ns
RD Inactive to Next
Address Active
TRHAV
VDD = 4.75V
9, 10, 11
TCLCL -
45
-
ns
GT Active Delay
TCLGL
VDD = 4.75V
9, 10, 11
0
85
ns
GT Inactive Delay
TCLGH
VDD = 4.75V
9, 10, 11
0
85
ns
RD Width
TRLRH
VDD = 4.75V
9, 10, 11
2TCLCL -
75
-
ns
Output Rise Time
TOLOH
VDD = 4.75V
From 0.8V to 2.0V
9, 10, 11
-
20
ns
Output Fall Time
TOHOL
VDD = 4.75V
From 2.0V to 0.8V
9, 10, 11
-
20
ns
NOTES:
1. Setup requirement for asynchronous signal only to guarantee recognition at next CLK.
2. Applies only to T2 State (8ns into T3).
3. The HS-80C86RH actively pulls the RQ/GT pin to a logic one on the following clock low time.
4. Status lines return to their inactive (logic one) state after CLK goes low and READY goes high.
TABLE 3A. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
CONDITIONS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input Capacitance
CIN
VDD = Open, f = 1MHz
(Note 1)
T
A
= +25
o
C
-
15
pF
Output Capacitance
COUT
VDD = Open, f = 1MHz
(Note 1)
T
A
= +25
o
C
-
15
pF
I/O Capacitance
CI/O
VDD = Open, f = 1MHz
(Note 1)
T
A
= +25
o
C
-
20
pF
TIMING REQUIREMENTS
CLK Rise Time
TCH1CH2
VDD = 4.75V and 5.25V
Min and Max Mode
from 1.0V to 3.5V
-35
o
C < T
A
< +125
o
C
-
15
ns
CLK Fall Time
TCL2CL1
VDD = 4.75V and 5.25V
Min and Max Mode
from 3.5V to 1.0V
-35
o
C < T
A
< +125
o
C
-
15
ns
Input Rise Time
TILIH
VDD = 4.75V and 5.25V
Min and Max Mode
from 0.8V to 2.0V
-35
o
C < T
A
< +125
o
C
-
25
ns
Input Fall Time
TIHIL
VDD = 4.75V and 5.25V
Min and Max Mode
from 2.0V to 0.8V
-35
o
C < T
A
< +125
o
C
-
25
ns
TABLE 2B. AC ELECTRICAL PERFORMANCE CHARACTERISTICS (MAX MODE) (Continued)
ACs tested at worst case VDD, ACs guaranteed over full operating specifications.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
相關PDF資料 |
PDF描述 |
|---|---|
| HS9-80C86RH | Radiation Hardened 16-Bit CMOS Microprocessor |
| HS1-81C55RH | Radiation Hardened 256 x 8 CMOS RAM |
| HS1-81C56RH | Radiation Hardened 256 x 8 CMOS RAM |
| HS-81C55RH | Radiation Hardened 256 x 8 CMOS RAM |
| HS-81C56RH | Radiation Hardened 256 x 8 CMOS RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HS9812R-PPM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PPM MULTIPLEX RECEIVER/DECODER |
| HS9-81C55RH | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 256 x 8 CMOS RAM |
| HS9-81C55RH-8 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 256 x 8 CMOS RAM |
| HS9-81C55RH-Q | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 256 x 8 CMOS RAM |
| HS9-81C56RH | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 256 x 8 CMOS RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。