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參數(shù)資料
| 型號(hào)： | HSB857J |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延平面晶體管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | HSB857J |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HJ200101
Issued Date : 2001.09.01
Revised Date : 2005.07.14
Page No. : 2/4
HSB857J
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
h
hFE @ V
CE
=3V
hFE @ V
CE
=4V
Saturation Voltage & Collector Current
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
V
CE(sat)
@ I
C
=10I
B
V
BE(sat)
@ I
C
=10I
B
Cutoff Frequency & Collector Current
100
1000
1
10
100
Collector Current-I
C
(mA)
C
fT @ V
CE
=5V
Capacitance & Reverse-Biased Voltage
10
100
1000
1
10
100
Reverse Biased Voltage (V)
C
Cob
Safe Operating Area
0.1
1
10
1
10
100
1000
Forward Voltage-V
CE
(V)
C
PT=1ms
PT=100ms
PT=1s
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