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參數(shù)資料
| 型號： | HW3238C |
| 元件分類： | 放大器 |
| 英文描述： | RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 87K |
| 代理商： | HW3238C |
Preliminary
HW3238C
Power Module
3/16/98
2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan TEL 886-3-578-5100
FAX 886-3-577-0512
All rights reserved.
Hexawave Inc.
All specifications are subject to change without notice.
Hexawave, Inc.
APPLICATIONS INFORMATION
Mounting Considerations
For the HW3238C module, mounting is done by soldering the four "feet" to a
suitable heatsink.
This can be done
with a low temperature solder which liquefies below 150 J
.
Under no circumstances should the HW3238C
modules be heated to a temperature greater than 165 J
.
Internal construction of the module has been achieved
using 36% lead, 62% tin, 2% Ag solder which liquefies at about 180 J
.
Also, remember that the modules are
NOT hermetic seal.
Nominal Operation
All electrical specifications are based on the nominal conditions of VDD1,2,3= 7VDC, VGG= -4VDC and linear output
power equal to 24 dBm at 3.4 ~ 3.8 GHz.
While the modules are designed to have excess gain margin with
ruggedness, operation of these units outside the published specifications is not recommended unless prior
communications regarding intended use have been made with a factory representative.
Decoupling
External decoupling networks are recommended to ensure stable operation of the device.
Pins 2, 3, 4, and 5 are
internally bypassed with a 1000 pF chip capacitor.
Additional external decoupling is recommended as shown in
Figure 1.
Inadequate decoupling will result in spurious outputs at certain operating frequencies and certain phase
angles of input and output VSWR.
Handling Considerations
GaAs FETs are more sensitive to electrostatic discharge (ESD) than Si bipolar transistors.
Therefore, steps should
be taken in handling GaAs products to prevent damage.
The use of ground straps, grounded breakers and test
equipment is strongly recommended.
Soldering Leads
Be sure the soldering iron is grounded.
Temperature of the iron should not exceed 350 J
.
Apply heat to a lead
to be soldered for not more than 5 seconds.
Load Mismatch
During final test each module is load mismatch tested in a fixture having the identical decoupling networks described
in Figure 1.
Electrical conditions are VDD2 = 8.0Vdc and VGG1,2 = -4Vdc, Pin at 5 mW, and VDD1 set for 31.5 dBm
output power and VSWR equal to 20:1.
Biasing and Use Considerations
In all cases, RF input power should not be applied until the bias voltages have been applied, and RF input power
should be turned off prior to removing the bias voltages.
Bias application should be timed such that gate voltage
(VGG1,2) is always applied before the drain voltages (VDD), and when returning to the standby mode, gate voltage should
only be removed once the drain voltages have been removed.
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