參數(shù)資料
型號(hào): HY27SF081G2M-TPEB
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: CONNECTOR ACCESSORY
中文描述: 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48
封裝: 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48
文件頁(yè)數(shù): 44/48頁(yè)
文件大?。?/td> 476K
代理商: HY27SF081G2M-TPEB
Rev 0.7 / Apr. 2005
44
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Symbol
Millimeters
Typ
0.90
0.30
0.60
0.45
9.50
4.00
7.20
12.00
5.60
8.80
0.80
2.75
1.15
3.20
1.60
0.40
0.40
Min
0.80
0.25
0.55
0.40
9.40
Max
1.00
0.35
0.65
0.50
9.60
A
A1
A2
b
D
D1
D2
E
E1
E2
e
FD
FD1
FE
FE1
SD
SE
11.90
12.10
'
'
6'
)'
)'
$
$
$
6(
)(
)(
(
(
%$//3$′
(
H
H
GGG
H
E
'
Figure 33. 63-ball FBGA - 9.5 x 12, 6 x 8 ball array 0.8mm pitch, Pakage Outline
NOTE
: Drawing is not to scale.
Table 21: 63-ball FBGA - 9.5 x 12, 6 x 8 ball array 0.8mm pitch, Pakage Mechanical Data
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