參數(shù)資料
型號(hào)： IBM0116400
廠商： IBM Microeletronics
英文描述： 4M x 4 12/10 DRAM(16M位 動(dòng)態(tài)RAM（帶22條地址線，其中12條為行地址選通，10條為列地址選通）)
中文描述： 4米× 4 12月10日的DRAM（1,600位動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶22條地址線，其中12條為行地址選通，10條為列地址選通））
文件頁數(shù)： 1/28頁
文件大?。?/td> 512K
代理商： IBM0116400
IBM0116400
IBM0116400B IBM0116400P
4M x 4 12/10 DRAM
IBM0116400M
43G9396
SA14-4203-06
Revised 4/97
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 28
Features
4,194,304 word by 4 bit organization
Single 3.3V
±
0.3V or 5.0V
±
0.5V power supply
Standard Power (SP) and Low Power (LP)
4096 Refresh Cycles
- 64 ms Refresh Rate (SP version)
- 256 ms Refresh Rate (LP version)
High Performance:
-50
-60
Units
t
RAC
RAS Access Time
50
60
ns
t
CAC
CAS Access Time
13
15
ns
t
AA
Column Address Access Time
25
30
ns
t
RC
Cycle Time
95
110
ns
t
PC
Fast Page Mode Cycle Time
35
40
ns
Low Power Dissipation
- Active (max) - 50 mA / 45 mA
- Standby: TTL Inputs (max) - 2.0 mA
- Standby: CMOS Inputs (max)
- 1.0 mA (SP version)
- 0.1 mA (LP version)
- Self Refresh (LP version only)
- 200
μ
A (3.3 Volt)
- 300
μ
A (5.0 Volt)
Read-Modify-Write
RAS Only and CAS before RAS Refresh
Hidden Refresh
Package: SOJ-28/24 (400mil x 725mil)
SOJ-26/24 (300mil x 675mil)
TSOP-26/24 (300mil x 675mil)
Description
The IBM0116400 is a dynamic RAM organized
4,194,304 words by 4 bits, which has a very low
“sleep mode” power consumption option. These
devices are fabricated in IBM’s advanced 0.5
μ
m
CMOS silicon gate process technology. The circuit
and process have been carefully designed to pro-
vide high performance, low power dissipation, and
high reliability. The devices operate with a single
3.3V
±
0.3V or 5.0V
±
0.5V power supply. The 22
addresses required to access any bit of data are
multiplexed (12 are strobed with RAS, 10 are
strobed with CAS).
Pin Assignments
(Top View)
28
27
26
25
24
23
20
19
18
17
16
15
Vss
I/O3
I/O2
CAS
OE
A9
A8
A7
A6
A5
A4
Vss
1
2
3
4
5
6
9
10
11
12
13
14
Vcc
I/O0
I/O1
WE
RAS
A11
A10
A0
A1
A2
A3
Vcc
26
25
24
23
22
21
19
18
17
16
15
14
Vss
I/O3
I/O2
CAS
OE
A9
A8
A7
A6
A5
A4
Vss
1
2
3
4
5
6
8
9
10
11
12
13
Vcc
I/O0
I/O1
WE
RAS
A11
A10
A0
A1
A2
A3
Vcc
28/24
26/24
Pin Description
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Read/Write Input
A0 - A11
Address Inputs
OE
Output Enable
I/O0 - I/O3
Data Input/Output
V
CC
Power (+3.3V or +5.0V)
V
SS
Ground
IBM01164004M x 412/10, 5.0VMMDD31DSU-011010328. IBM0116400P 4M x 412/10, 3.3V, LP, SRMMDD31DSU-011010328. IBM0116400M 4M x 412/10, 5.0V, LP, SRMMDD31DSU-011010328. IBM0116400B4M x 412/10, 3.3VMMDD31DSU-011010328.
Discontinued (9/98 - last order; 3/99 last ship)
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IBM0164405B 16M x 4 13/11 EDO DRAM(16M x 4 動(dòng)態(tài)RAM（超頁面模式并帶24條地址線，其中13條為行地址選通，11條為列地址選通）)
IBM0164405P 16M x 4 13/11 EDO DRAM(16M x 4 動(dòng)態(tài)RAM（超頁面模式并帶24條地址線，其中13條為行地址選通，11條為列地址選通）)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBM0116405JIE60 制造商:IBM 功能描述:53H2588
IBM0116405PT1F60 制造商:IBM 功能描述:*
IBM01164B0T3F60 制造商:IBM 功能描述:51H0567
IBM01164D0T3F60 制造商:IBM 功能描述:51H0568
IBM0117400J1E70 制造商:IBM 功能描述:53H2508
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