參數(shù)資料
型號(hào): IBM11D8480BG
廠商: IBM Microeletronics
英文描述: 8M x 36 ECC-on-SIMM(single in-line memory module)(8M x 36 片上帶可兼容的糾錯(cuò)代碼的單列動(dòng)態(tài)RAM模塊)
中文描述: 8米× 36 ECC的問題,上海藥物研究所(單列直插式內(nèi)存模塊)(8米× 36片上帶可兼容的糾錯(cuò)代碼的單列動(dòng)態(tài)內(nèi)存模塊)
文件頁數(shù): 9/18頁
文件大?。?/td> 242K
代理商: IBM11D8480BG
IBM11D8480BG
IBM11E8480BG
8M x 36 ECC-on-SIMM
26H2528
Revised 10/98
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 9 of 18
Fast Page Mode Cycle
Symbol
Parameter
-70
Units
Notes
Min
Max
t
PC
Fast Page Mode Cycle Time
45
ns
t
RASP
Fast Page Mode RAS Pulse Width
70
100K
ns
t
CPRH
RAS Hold Time from CAS Precharge
40
ns
t
CPA
Access Time from CAS Precharge
45
ns
1, 2
1. Access time is determined by the latter of t
RAC
, t
CAC
, t
CPA
, t
AA
.
2. Access time assumes a load of 100pF.
Refresh Cycle
Symbol
Parameter
-70
Units
Notes
Min
Max
t
CHR
CAS Hold Time
(CAS before RAS Refresh Cycle)
10
ns
t
CSR
CAS Setup Time
(CAS before RAS Refresh Cycle)
5
ns
t
WRP
WE Setup Time
(CAS before RAS Refresh Cycle)
5
ns
t
WRH
WE Hold Time
(CAS before RAS Refresh Cycle)
10
ns
t
RPC
RAS Precharge to CAS Hold Time
5
ns
t
REF
Refresh Period
32
ms
1
1. 2048 refreshes are required every 32ms. The DC variation in the V
CC
supply may not exceed 300mV within a refresh interval
(32ms).
Discontinued (7/00 - last order; 9/00 - last ship)
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