- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379204 > IBM11E8480BG (IBM Microeletronics) 8M x 36 ECC-on-SIMM（single in-line memory module）(8M x 36 片上帶可兼容的糾錯(cuò)代碼的單列動(dòng)態(tài)RAM模塊) PDF資料下載
參數(shù)資料
| 型號(hào)： | IBM11E8480BG |
| 廠商： | IBM Microeletronics |
| 英文描述： | 8M x 36 ECC-on-SIMM（single in-line memory module）(8M x 36 片上帶可兼容的糾錯(cuò)代碼的單列動(dòng)態(tài)RAM模塊) |
| 中文描述： | 8米× 36 ECC的問題，上海藥物研究所（單列直插式內(nèi)存模塊）（8米× 36片上帶可兼容的糾錯(cuò)代碼的單列動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 6/18頁 |
| 文件大?。?/td> | 242K |
| 代理商： | IBM11E8480BG |
IBM11D8480BG
IBM11E8480BG
8M x 36 ECC-on-SIMM
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 6 of 18
26H2528
Revised 10/98
DC Electrical Characteristics
(Tc = 0 to +65
°
C, V
CC
= 5.0
±
0.25V)
Symbol
Parameter
Min
Max
Units
Notes
I
CC1
Operating Current
Average Power Supply Operating Current
(RAS, CAS, Address Cycling: t
RC
= t
RC
min)
-70
—
1104
mA
1, 2, 3
I
CC2
Standby Current (TTL)
Power Supply Standby Current
(RAS = CAS
≥
V
IH
)
—
48
mA
I
CC3
RAS Only Refresh Current
Average Power Supply Current, RAS Only Mode
(RAS Cycling, CAS
≥
V
IH
: t
RC
= t
RC
min)
-70
—
1104
mA
1, 3, 4
I
CC4
Fast Page Mode Current
Average Power Supply Current, Fast Page Mode
(RAS = V
IL
, CAS, Address Cycling: t
PC
= t
PC
min)
-70
—
984
mA
1, 2, 3
I
CC5
Standby Current (CMOS)
Power Supply Standby Current
(RAS = CAS = V
CC
- 0.2V)
—
24
mA
I
CC6
CAS Before RAS Refresh Current
Average Power Supply Current, CAS Before RAS Mode
(RAS, CAS, Cycling: t
RC
= t
RC
min)
-70
—
1104
mA
1, 3, 4
I
I(L)
Input Leakage Current
Input Leakage Current, any input
(0.0
≤
V
≤
(V
< 6.0V))
All Other Pins Not Under Test = 0V
RAS
-460
+460
μ
A
CAS, WE
-70
+70
Address
-240
+240
I
O(L)
Output Leakage Current
(D
OUT
is disabled, 0.0
≤
V
OUT
≤
V
CC
)
-10
+10
μ
A
V
OH
Output High Level
Output "H" Level Voltage (I
OUT
= -4mA @ 2.4V)
2.4
—
V
V
OL
Output Low Level
Output "L" Level Voltage (I
OUT
= +4mA @ 0.4V)
—
0.4
V
1. I
CC1
, I
CC3
, I
CC4
and I
CC6
depend on cycle rate.
2. I
CC1
, I
CC4
depend on output loading. Specified values are obtained with the output open.
3. Address can be changed once or less while RAS = V
IL
. In the case of I
CC4
, it can be changed once or less when CAS = V
IH
.
4. When refreshing both banks at once, the refresh current becomes 2160mA.
Discontinued (7/00 - last order; 9/00 - last ship)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IBM11D8480BG | 8M x 36 ECC-on-SIMM（single in-line memory module）(8M x 36 片上帶可兼容的糾錯(cuò)代碼的單列動(dòng)態(tài)RAM模塊) |
| IBM11M2640HB | 2M x 64 DRAM Module(2M x 64 動(dòng)態(tài)RAM模塊) |
| IBM11M2640H | 2M x 64 DRAM Module(2M x 64 動(dòng)態(tài)RAM模塊) |
| IBM11M2730HB | 2M x 72 DRAM Module(2M x 72 動(dòng)態(tài)RAM模塊) |
| IBM11M2730H | 2M x 72 DRAM Module(2M x 72 動(dòng)態(tài)RAM模塊) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IBM14H5481 | 制造商:AVED Memory Products 功能描述: |
| IBM14H5540 | 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述: |
| IBM17R8251 | 制造商:AVED Memory Products 功能描述: |
| IBM17R8252 | 制造商:AVED Memory Products 功能描述: |
| IBM1805T | 制造商:Schneider Electric 功能描述:IBM1805T |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。