參數(shù)資料
型號(hào)： IBM11M2640HB
廠商： IBM Microeletronics
英文描述： 2M x 64 DRAM Module(2M x 64 動(dòng)態(tài)RAM模塊)
中文描述： 200萬(wàn)× 64內(nèi)存（2米× 64動(dòng)態(tài)內(nèi)存模塊）
文件頁(yè)數(shù)： 6/26頁(yè)
文件大?。?/td> 480K
代理商： IBM11M2640HB
IBM11M2640H
IBM11M2640HB
2M x 64 DRAM MODULE
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 6 of 26
64G1559
SA14-4612-04
Revised 5/96
DC Electrical Characteristics
(T
A
= 0 to +70
°
C, V
CC
= 3.3V
±
0.3V or 5.0V
±
0.5V)
Symbol
Parameter
Min
Max
Units
Notes
I
CC1
Operating Current
Average Power Supply Operating Current
(RAS, CAS, Address Cycling: t
RC
= t
RC
min)
-60
—
720
mA
1,2,3
-70
—
640
I
CC2
Standby Current (TTL)
Power Supply Standby Current
(RAS = CAS
≥
V
IH
)
—
16
mA
I
CC3
RAS Only Refresh Current
Average Power Supply Current, RAS Only Mode
(RAS Cycling, CAS
≥
V
IH
: t
RC
= t
RC
min)
-60
—
720
mA
1,3
-70
—
640
I
CC4
Fast Page Mode Current
Average Power Supply Current, Fast Page Mode
(RAS
≤
V
IL
, CAS, Address Cycling: t
PC
= t
PC
min)
-60
—
400
mA
1,2,3
-70
—
320
I
CC5
Standby Current (CMOS)
Power Supply Standby Current
(RAS = CAS = V
CC
- 0.2V)
—
8
mA
I
CC6
CAS before RAS Refresh Current
Average Power Supply Current, CAS Before RAS Mode
(RAS, CAS, Cycling: t
RC
= t
RC
min)
-60
—
720
mA
1,3
-70
—
640
I
I(L)
Input Leakage Current
Input Leakage Current, any Input
(0.0
≤
V
IN
≤
(V
CC
< 6.0V)), All Other Pins Not Under Test = 0V
All but RAS
-10
+10
μ
A
RAS
-40
+40
I
O(L)
Output Leakage Current
(D
OUT
is disabled, 0.0
≤
V
OUT
≤
V
CC
)
-10
+10
μ
A
V
OH
Output High Level
Output “H” Level Voltage (I
OUT
= -5mA @ 2.4V)
2.4
—
V
V
OL
Output Low level
Output “L” Level Voltage (I
OUT
= +4.2mA @ 0.4V)
—
0.4
V
1. I
CC1
,I
CC3
,I
CC4
and I
CC6
depend on cycle rate.
2. I
CC1
,I
CC4
depend on output loading. Specified values are obtained with output open.
3. Address can be changed once or less while RAS = V
IL
. In the case of I
CC4
, it can be changed once or less when CAS = V
IH.
Discontinued (9/98 - last order; 3/99 last ship)
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