參數(shù)資料
型號: IBM11M4640CB
廠商: IBM Microeletronics
英文描述: 4M x 64 DRAM MODULE(4M x 64 工業(yè)標準的168腳8位動態(tài)RAM模塊)
中文描述: 4米× 64的DRAM模組(4米× 64工業(yè)標準的168腳8位動態(tài)內(nèi)存模塊)
文件頁數(shù): 10/26頁
文件大?。?/td> 518K
代理商: IBM11M4640CB
IBM11M4640C
IBM11M4640CB
4M x 64 DRAM MODULE
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 10 of 26
03H7156
SA14-4609-04
Revised 5/96
Fast Page Mode Cycle
Symbol
Parameter
-60
-70
Unit
Notes
Min
Max
Min
Max
t
PC
Fast Page Mode Cycle Time
40
45
ns
t
RASP
Fast Page Mode RAS Pulse Width
60
100K
70
100K
ns
t
CPRH
RAS Hold Time from CAS Precharge
40
45
ns
t
CPA
Access Time from CAS Precharge
40
45
ns
1,2
1. Measured with the specified current load and 100pF.
2. Access time is determined by the latter of t
RAC
, t
CAC
, t
CPA
, t
AA
, t
OEA
.
Read-Modify-Write Cycle
Symbol
Parameter
-60
-70
Unit
Notes
Min
Max
Min
Max
t
RWC
Read-Modify-Write Cycle Time
158
188
ns
t
RWD
RAS to WE Delay Time
83
98
ns
1
t
CWD
CAS to WE Delay Time
45
55
ns
1
t
AWD
Column Address to WE Delay Time
58
68
ns
1
t
OEH
OE Command Hold Time
15
15
ns
1. t
WCS
, t
RWD
, t
CWD
, t
AWD
, and t
CPW
are not restrictive parameters. They are included in the data sheet as electrical characteristics
only. If t
WCS
t
WCS
(min.), the entire cycle is an early write cycle and the data pin will remain open circuit (high impedance) through
the entire cycle; If t
RWD
t
RWD
(min.), t
CWD
t
CWD
(min.), t
AWD
t
AWD
(min.) and t
CPW
t
CPW
(min.)(Fast Page Mode), the cycle is a
Read-Modify-Write cycle and the data will contain read from the selected cell: If neither of the above sets of conditions are met, the
condition of the data (at access time) is indeterminate.
Fast Page Mode Read-Modify-Write Cycle
Symbol
Parameter
-60
-70
Unit
Notes
Min
Max
Min
Max
t
PRWC
Fast Page Mode Read-Modify-Write Cycle Time
83
98
ns
t
CPW
WE Delay time from CAS Precharge
63
73
ns
1
1. t
WCS
, t
RWD
, t
CWD
, t
AWD
, and t
CPW
are not restrictive parameters. They are included in the data sheet as electrical characteristics only.
If t
WCS
t
WCS
(min.), the entire cycle is an early write cycle and the data pin will remain open circuit (high impedance) through the
entire cycle; If t
RWD
t
RWD
(min.), t
CWD
t
CWD
(min.), t
AWD
t
AWD
(min.) and t
CPW
t
CPW
(min.)(Fast Page Mode), the cycle is a Read-
Modify-Write cycle and the data will contain read from the selected cell: If neither of the above sets of conditions are met, the con-
dition of the data (at access time) is indeterminate.
Discontinued (9/98 - last order; 3/99 last ship)
相關(guān)PDF資料
PDF描述
IBM11M4640C 4M x 64 DRAM MODULE(4M x 64 工業(yè)標準的168腳8位動態(tài)RAM模塊)
IBM11M4730CF 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊)
IBM11M4730CB 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊)
IBM11M4730CH 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊)
IBM11M4730HB 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBM14H5481 制造商:AVED Memory Products 功能描述:
IBM14H5540 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述:
IBM17R8251 制造商:AVED Memory Products 功能描述:
IBM17R8252 制造商:AVED Memory Products 功能描述:
IBM1805T 制造商:Schneider Electric 功能描述:IBM1805T