參數(shù)資料
型號: IBM11M4730CF
廠商: IBM Microeletronics
英文描述: 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊)
中文描述: 4米× 72內(nèi)存(4米× 72動態(tài)內(nèi)存模塊)
文件頁數(shù): 14/27頁
文件大?。?/td> 500K
代理商: IBM11M4730CF
IBM11M4730CB
IBM11M4730CF
4M x 72 DRAM Module
IBM11M4730CH
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 14 of 27
64G1557.E20999D
Revised 4/98
Write Cycle (Late Write)
RAS
V
IH
V
IL
V
IH
V
IL
Address
V
IH
V
IL
WE
V
IH
V
IL
OE
V
IH
V
IL
V
IH
V
IL
D
OUT
V
OH
V
OL
D
IN
Row
Column
t
RAS
t
RP
t
RC
t
RSH
t
CSH
t
CRP
t
RAH
t
ASC
t
CAH
t
ASR
t
RAD
t
RWL
: “H” or “L”
t
WP
t
CWL
Valid Data In
Hi-Z*
Hi-Z
t
DZC
t
OEH
t
OEZ
t
CLZ
t
OEA
t
DS
t
ODD
t
RCD
t
DH
t
RCS
*
Output remains Hi-Z because WE is latched internally following t
wp
min.
t
DZO
Hi-Z
CAS
t
CAS
t
AR
t
WCR
t
DHR
Discontinued (9/98 - last order; 3/99 last ship)
相關(guān)PDF資料
PDF描述
IBM11M4730CB 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊)
IBM11M4730CH 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊)
IBM11M4730HB 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊)
IBM11M4730H 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊)
IBM11M4735HB 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊)
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