參數(shù)資料
型號: IBM11M4730CF
廠商: IBM Microeletronics
英文描述: 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊)
中文描述: 4米× 72內(nèi)存(4米× 72動態(tài)內(nèi)存模塊)
文件頁數(shù): 24/27頁
文件大?。?/td> 500K
代理商: IBM11M4730CF
IBM11M4730CB
IBM11M4730CF
4M x 72 DRAM Module
IBM11M4730CH
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 24 of 27
64G1557.E20999D
Revised 4/98
Layout Drawing
DRAM in SOJ
66.68 (3.3V), 65.68 (5.0V)
2.63 (3.3V), 2.586 (5.0V)
6.35
.250
43.18 (3.3V), 42.18 (5.0V)
1.70 (3.3V), 1.661 (5.0V)
R 1.00
.0393
1.27 pitch
.050
1.00 width
.039
Note:
All dimensions are typical unless otherwise stated.
9.00
.354 MAX.
Side
1.27 +
.050 +
2.0
.078
.
See detail A/B
Detail A
3.3V Version
SCALE: 4/1
(2) 0
3.1877
.1255
133.35
5.25
131.35
5.171
127.35
5.014
(
.
1
Front
Millimeters
Inches
R 1.00
.0393
2.0
.078
.
Detail B
5.0V Version
Discontinued (9/98 - last order; 3/99 last ship)
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IBM11M4730CB 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊)
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