參數(shù)資料
型號(hào)： IBM11M4730CF
廠商： IBM Microeletronics
英文描述： 4M x 72 DRAM Module(4M x 72 動(dòng)態(tài)RAM模塊)
中文描述： 4米× 72內(nèi)存（4米× 72動(dòng)態(tài)內(nèi)存模塊）
文件頁(yè)數(shù)： 6/27頁(yè)
文件大?。?/td> 500K
代理商： IBM11M4730CF
IBM11M4730CB
IBM11M4730CF
4M x 72 DRAM Module
IBM11M4730CH
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 6 of 27
64G1557.E20999D
Revised 4/98
AC Characteristics
(T
A
= 0 to +70
°
C, V
CC
= 3.3V 0.3V or 5.0V 0.5V)
1. V
IH
(min) and V
IL
(max) are reference levels for measuring timing of input signals. Transition times are measured between V
IH
and
V
IL
.
2. An initial pause of 200
μ
s is required after power-up followed by 8 RAS only refresh cycles before proper device operation is
achieved. In case of using internal refresh counter, a minimum of 8 CAS before RAS refresh cycles instead of 8 RAS only refresh
cycles is required.
3. The specified timings include buffer, loading, and skew delay adders: 2ns minimum, 5ns maximum delay, no pulse shrinkage to the
DRAM device timings. The data and RAS signals are not buffered, which preserves the DRAMs access specification of 60ns.
4. AC measurements assume t
T
= 5ns.
DC Electrical Characteristics
(T
A
= 0 to +70C, V
CC
= 3.3V
±
0.3V or V
CC
= 5.0V
±
0.5V)
Symbol
Parameter
Min.
Max.
Units
Notes
I
CC1
Operating Current
Average Power Supply Operating Current
(RAS, CAS, Address Cycling: t
RC
= t
RC
min.)
-60
—
1350
mA
1, 2, 3
I
CC2
Standby Current (TTL)
Power Supply Standby Current
(RAS = CAS = V
IH
)
—
36
mA
I
CC3
RAS Only Refresh Current
Average Power Supply Current, RAS Only Mode
(RAS Cycling, CAS = V
IH
: t
RC
= t
RC
min)
-60
—
1350
mA
1, 3
I
CC4
Fast Page Mode Current
Average Power Supply Current, Fast Page Mode
(RAS = V
IL
, CAS, Address Cycling: t
PC
= t
PC
min)
-60
—
1170
mA
1, 2, 3
I
CC5
Standby Current (CMOS)
Power Supply Standby Current
(RAS = CAS = V
CC
- 0.2V)
—
18
mA
I
CC6
CAS Before RAS Refresh Current
Average Power Supply Current, CAS Before RAS Mode
(RAS, CAS, Cycling: t
RC
= t
RC
min)
-60
—
1350
mA
1, 3
I
I(L)
Input Leakage Current
Input Leakage Current, any input
(0.0
≤
V
IN
≤
(V
CC
+ 0.3V)), All Other Pins Not Under Test = 0V
All but RAS
-10
+10
μ
A
RAS
-90
+90
I
O(L)
Output Leakage Current
(D
OUT
is disabled, 0.0
≤
V
OUT
≤
V
CC
)
-10
+10
μ
A
V
OH
Output Level (TTL)
Output “H” Level Voltage
(I
OUT
= -2mA for 3.3V, or I
OUT
= -5mA for 5.0V)
2.4
V
CC
V
V
OL
Output Level (TTL)
Output “L” Level Voltage
(I
OUT
= +2mA for 3.3V, or I
OUT
= +4.2mA for 5.0V)
0.0
0.4
V
1. I
CC1
, I
CC3
, I
CC4,
and I
CC6
depend on cycle rate.
2. I
CC1
and I
CC4
depend on output loading. Specified values are obtained with the output open.
3. Address can be changed once or less while RAS =V
IL
. In the case of I
CC4
, it can be changed once or less when CAS =V
IH
.
Discontinued (9/98 - last order; 3/99 last ship)
相關(guān)PDF資料
PDF描述
IBM11M4730CB 4M x 72 DRAM Module(4M x 72 動(dòng)態(tài)RAM模塊)
IBM11M4730CH 4M x 72 DRAM Module(4M x 72 動(dòng)態(tài)RAM模塊)
IBM11M4730HB 4M x 72 DRAM Module(4M x 72 動(dòng)態(tài)RAM模塊)
IBM11M4730H 4M x 72 DRAM Module(4M x 72 動(dòng)態(tài)RAM模塊)
IBM11M4735HB 4M x 72 DRAM Module(4M x 72 動(dòng)態(tài)RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBM14H5481 制造商:AVED Memory Products 功能描述:
IBM14H5540 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述:
IBM17R8251 制造商:AVED Memory Products 功能描述:
IBM17R8252 制造商:AVED Memory Products 功能描述:
IBM1805T 制造商:Schneider Electric 功能描述:IBM1805T
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*