- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379204 > IBM11M4735HB (IBM Microeletronics) 4M x 72 DRAM Module(4M x 72 動(dòng)態(tài)RAM模塊) PDF資料下載
參數(shù)資料
| 型號(hào)： | IBM11M4735HB |
| 廠商： | IBM Microeletronics |
| 英文描述： | 4M x 72 DRAM Module(4M x 72 動(dòng)態(tài)RAM模塊) |
| 中文描述： | 4米× 72內(nèi)存（4米× 72動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 4/28頁(yè) |
| 文件大?。?/td> | 516K |
| 代理商： | IBM11M4735HB |
第1頁(yè)第2頁(yè)第3頁(yè)當(dāng)前第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)
IBM11M4735HB
4M x 72 DRAM MODULE
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 4 of 27
75H5409
GA14-4639-00
Revised 11/96
Truth Table
Function
RAS
CAS
WE
OE
Row
Address
X
Row
Row
Column
Address
X
Col
Col
PDE
DQx
Standby
Read
Early-Write
H
L
L
H
→
X
L
L
X
H
L
X
L
X
X
X
X
High Impedance
Valid Data Out
Valid Data In
Valid Data Out,
Valid Data In
Late-Write / RMW
L
L
H
→
L
L
→
H
Row
Col
X
Fast Page Mode - Read
1st Cycle
Subsequent Cycles
Fast Page Mode - Write
1st Cycle
Subsequent Cycles
Fast Page Mode - RMW
1st Cycle
L
H
→
L
H
L
Row
Col
X
Valid Data Out
L
H
→
L
H
L
N/A
Col
X
Valid Data Out
L
H
→
L
L
X
Row
Col
X
Valid Data In
L
H
→
L
L
X
N/A
Col
X
Valid Data In
L
H
→
L
H
→
L
L
→
H
Row
Col
X
Valid Data Out,
Valid Data In
Subsequent Cycles
L
H
→
L
H
→
L
L
→
H
N/A
Col
X
Valid Data Out,
Valid Data In
RAS-Only Refresh
L
H
X
X
Row
N/A
X
High Impedance
CAS-Before-RAS Refresh
H
→
L
L
H
X
X
X
X
High Impedance
Hidden Refresh
Read
L
→
H
→
L
L
H
L
Row
Col
X
Data Out
Write
L
→
H
→
L
L
H
X
Row
Col
X
Data In
Read Presence Detects
X
X
X
X
X
X
L
Not Affected
(PD Bits Valid)
Presence Detect
Pin
-60
PD1 (PD1 - PD4: Addressing/Density)
0
PD2
1
PD3
0
PD4
1
PD5 (EDO Detection)
1
PD6 (PD6 - PD7: Speed)
1
PD7
1
PD8 (Parity/ECC Designator)
0
ID0 (DIMM Type/Width)
0
ID1 (Refresh Mode)
0
1. PD1-8 are buffered outputs (0 = driven to V
OL
, 1 = open)
2. ID0-1 are unbuffered outputs (0 = V
SS
, 1 = open)
3. PDE should be tied high or low at system level if not used
Discontinued (9/98 - last order; 3/99 last ship)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IBM11M8730C | 8M x 72 DRAM Module(8M x 72 動(dòng)態(tài)RAM模塊) |
| IBM11M8730CB | 8M x 72 DRAM Module(8M x 72 動(dòng)態(tài)RAM模塊) |
| IBM11M8735C | 8M x 72 DRAM Module(8M x 72 動(dòng)態(tài)RAM模塊) |
| IBM11M8735CB | 8M x 72 DRAM Module(8M x 72 動(dòng)態(tài)RAM模塊) |
| IBM11M8735H | 8M x 72 DRAM Module(8M x 72 動(dòng)態(tài)RAM模塊) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IBM14H5481 | 制造商:AVED Memory Products 功能描述: |
| IBM14H5540 | 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述: |
| IBM17R8251 | 制造商:AVED Memory Products 功能描述: |
| IBM17R8252 | 制造商:AVED Memory Products 功能描述: |
| IBM1805T | 制造商:Schneider Electric 功能描述:IBM1805T |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。