- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379204 > IBM11M4735HB (IBM Microeletronics) 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊) PDF資料下載
參數(shù)資料
| 型號： | IBM11M4735HB |
| 廠商： | IBM Microeletronics |
| 英文描述： | 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊) |
| 中文描述： | 4米× 72內(nèi)存（4米× 72動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 5/28頁 |
| 文件大小： | 516K |
| 代理商： | IBM11M4735HB |
第1頁第2頁第3頁第4頁當前第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁
IBM11M4735HB
4M x 72 DRAM MODULE
75H5409
GA14-4639-00
Revised 11/96
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 5 of 27
Absolute Maximum Ratings
Symbol
Parameter
Rating (3.3V)
Units
Notes
V
CC
Power Supply Voltage
-0.5 to +4.6
V
1
V
IN
Input Voltage
-0.5 to min (V
CC
+ 0.5, 4.6)
V
1
V
OUT
Output Voltage
-0.5 to min (V
CC
+ 0.5, 4.6)
V
°
C
°
C
1
T
OPR
Operating Temperature
0 to +70
1
T
STG
Storage Temperature
-55 to +125
1
P
D
Power Dissipation
3.0
W
1, 2
I
OUT
Short Circuit Output Current
50
mA
1
I
OUTPD
Short Circuit Output Current (PD)
60
mA
1
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only and functional opera-
tion of the device at these or any other conditions above those indicated is not implied. Exposure to absolute maximum rating con-
dition for extended periods may affect reliability.
2. Maximum power occurs when all banks are active (refresh cycle).
Recommended DC Operating Conditions
(T
A
= 0 to 70
°
C)
Symbol
Parameter
3.3V
Units
Notes
Min
Typ
Max
V
CC
Supply Voltage
3.0
3.3
3.6
V
1
V
IH
Input High Voltage
2.0
—
V
CC
+ 0.5
V
1, 2
V
IL
Input Low Voltage
-0.5
—
0.8
V
1, 2
1. All voltages referenced to V
SS.
2. V
IH
may overshoot to V
CC
+ 1.2V for pulse widths of
≤
4.0ns, or V
CC
+ 2.0V for pulse widths of
≤
4.0ns. Additionally, V
IL
may under-
shoot to -2.0V for pulse widths
≤
4.0ns (or -1.0V for
≤
8.0ns). Pulse widths measured at 50% points with amplitude measured peak
to DC reference.
Capacitance
(T
A
= 0 to +70
°
C, V
CC
= 3.3V
±
0.3V)
Symbol
Parameter
Max
Units
C
I1
Input Capacitance (A0, B0, A1-A10)
13
pF
C
I2
Input Capacitance (RAS)
RAS0, 1
40
pF
RAS2, 3
35
pF
C
I3
Input Capacitance (CAS, WE, OE)
13
pF
C
I4
Input Capacitance (PDE)
18
pF
C
IO1
Input/Output Capacitance (DQ
X
)
22
pF
C
O1
Output Capacitance (PD)
15
pF
C
O2
Output Capacitance (ID)
5
pF
Discontinued (9/98 - last order; 3/99 last ship)
相關PDF資料 |
PDF描述 |
|---|---|
| IBM11M8730C | 8M x 72 DRAM Module(8M x 72 動態(tài)RAM模塊) |
| IBM11M8730CB | 8M x 72 DRAM Module(8M x 72 動態(tài)RAM模塊) |
| IBM11M8735C | 8M x 72 DRAM Module(8M x 72 動態(tài)RAM模塊) |
| IBM11M8735CB | 8M x 72 DRAM Module(8M x 72 動態(tài)RAM模塊) |
| IBM11M8735H | 8M x 72 DRAM Module(8M x 72 動態(tài)RAM模塊) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IBM14H5481 | 制造商:AVED Memory Products 功能描述: |
| IBM14H5540 | 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述: |
| IBM17R8251 | 制造商:AVED Memory Products 功能描述: |
| IBM17R8252 | 制造商:AVED Memory Products 功能描述: |
| IBM1805T | 制造商:Schneider Electric 功能描述:IBM1805T |
發(fā)布緊急采購，3分鐘左右您將得到回復。