參數(shù)資料
型號(hào)： IBM11M8730C
廠商： IBM Microeletronics
英文描述： 8M x 72 DRAM Module(8M x 72 動(dòng)態(tài)RAM模塊)
中文描述： 8米× 72內(nèi)存（8米× 72動(dòng)態(tài)內(nèi)存模塊）
文件頁(yè)數(shù)： 25/26頁(yè)
文件大?。?/td> 528K
代理商： IBM11M8730C
IBM11M8730C
IBM11M8730CB
8M x 72 DRAM MODULE
50H8039
SA14-4629-02
Released 6/96
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 25 of 25
Revision Log
Rev
Contents of Modification
1/96
Initial Release.
3/96
Improved power dissipation
Improved DC electrical characteristics: I
CC1,
I
CC3,
I
CC4,
I
CC6
Updated address capacitances
Added timing: t
CAS
Improved timings: t
CAH,
t
CRP,
t
DH,
t
RRH,
t
OEZ,
t
CDD,
t
OFF,
t
OEH
The CBR timing diagram was changed to allow CAS to remain low for back-to-back CBR cycles.
Hidden Refresh Cycle (Read) timing diagram was changed to show data being turned off with CAS not RAS
5/96
Updated ordering information
Discontinued (9/98 - last order; 3/99 - last ship)
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