- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379204 > IBM11N16845BB (IBM Microeletronics) 16M x 72 Chip-Kill Protect ECC-on-DIMM Module(16M x 72 帶糾錯代碼保護(hù)的小外形雙列直插動態(tài)RAM模塊) PDF資料下載
參數(shù)資料
| 型號： | IBM11N16845BB |
| 廠商： | IBM Microeletronics |
| 英文描述： | 16M x 72 Chip-Kill Protect ECC-on-DIMM Module(16M x 72 帶糾錯代碼保護(hù)的小外形雙列直插動態(tài)RAM模塊) |
| 中文描述： | 1,600 × 72片，殺死保護(hù)ECC的上內(nèi)存模塊（1,600 × 72帶糾錯代碼保護(hù)的小外形雙列直插動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 10/29頁 |
| 文件大?。?/td> | 502K |
| 代理商： | IBM11N16845BB |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁當(dāng)前第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁
IBM11N16845BB
IBM11N16845CB
16M x 72 Chip-Kill Protect ECC-on-DIMM Module
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 10 of 29
75H5487
GA14-4642-00
Revised 11/96
Read-Modify-Write Cycle
Symbol
Parameter
-6R
Unit
Notes
Min
Max
t
RWC
Read-Modify-Write Cycle Time
135
—
ns
t
RWD
RAS to WE Delay Time
79
—
ns
1
t
CWD
CAS to WE Delay Time
34
—
ns
1
t
AWD
Column Address to WE Delay Time
49
—
ns
1
t
OEH
OE Command Hold Time
10
—
ns
1. t
WCS
, t
RWD
, t
CWD
, and t
AWD
are not restrictive parameters. They are included in the data sheet as electrical characteristics only. If
t
WCS
≥
t
WCS
(min.), the entire cycle is an early write cycle and the data pin will remain open circuit (high impedance) through the
entire cycle; If t
RWD
≥
t
RWD
(min.), t
CWD
≥
t
CWD
(min.) and t
AWD
≥
t
AWD
(min.), the cycle is a Read-Modify-Write cycle and the data will
contain read from the selected cell: If neither of the above sets of conditions are met, the condition of the data (at access time) is
indeterminate.
EDO Mode Cycle
Symbol
Parameter
-6R
Units
Notes
Min.
Max.
t
HCAS
CAS Pulse Width (EDO Page Mode)
10
10K
ns
t
HPC
EDO Page Mode Cycle Time (Read/Write)
25
—
ns
t
HPRWC
EDO Page Mode Read Modify Write Cycle Time
60
—
ns
t
DOH
Data-out Hold Time from CAS
5
—
ns
t
WHZ
Output buffer Turn-Off Delay from WE
0
10
ns
t
WPZ
WE Pulse Width to Output Disable at CAS High
10
—
ns
t
CPRH
RAS Hold Time from CAS Precharge
35
—
ns
t
CPA
Access Time from CAS Precharge
—
35
ns
1
t
RASP
EDO Page Mode RAS Pulse Width
60
200K
ns
t
OEP
OE High Pulse Width
10
—
ns
t
OEHC
OE High Hold Time from CAS High
10
—
ns
1. Measured with the specified current load and 100pF at V
OL
= 0.8V and V
OH
= 2.0V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IBM11N16845CB | 16M x 72 Chip-Kill Protect ECC-on-DIMM Module(16M x 72 帶糾錯代碼保護(hù)的小外形雙列直插動態(tài)RAM模塊) |
| IBM11N2645H | 2M x 64 DRAM Module(2M x 64 動態(tài)RAM模塊) |
| IBM11N2735H | 2M x 72 DRAM Module(2M x 72 動態(tài)RAM模塊) |
| IBM11N4645BB | 4M x 64 DRAM Module(4M x 64 動態(tài)RAM模塊) |
| IBM11N4645CB | 4M x 64 DRAM Module(4M x 64 動態(tài)RAM模塊) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IBM14H5481 | 制造商:AVED Memory Products 功能描述: |
| IBM14H5540 | 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述: |
| IBM17R8251 | 制造商:AVED Memory Products 功能描述: |
| IBM17R8252 | 制造商:AVED Memory Products 功能描述: |
| IBM1805T | 制造商:Schneider Electric 功能描述:IBM1805T |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。