參數(shù)資料
型號: IBM11N16845CB
廠商: IBM Microeletronics
英文描述: 16M x 72 Chip-Kill Protect ECC-on-DIMM Module(16M x 72 帶糾錯代碼保護的小外形雙列直插動態(tài)RAM模塊)
中文描述: 1,600 × 72片,殺死保護ECC的上內存模塊(1,600 × 72帶糾錯代碼保護的小外形雙列直插動態(tài)內存模塊)
文件頁數(shù): 19/29頁
文件大?。?/td> 502K
代理商: IBM11N16845CB
IBM11N16845BB
IBM11N16845CB
Preliminary
16M x 72 Chip-Kill Protect ECC-on-DIMM Module
75H5487
GA14-4642-00
Revised 11/96
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 19 of 29
EDO Page Mode Read Cycle (WE Control)
t
RP
Data Out 1
Data Out 2
OE
WE
RAS
Row
Address
Column 1
Column 2
Column N
t
OEA
t
OEZ
t
CLZ
t
CAC
V
IH
V
IL
t
ASR
t
RAH
t
ASC
t
ASC
t
CAH
t
CAH
t
CAH
D
OUT
t
RASP
t
CPRH
t
CRP
t
RSH
t
HCAS
t
HCAS
t
HPC
t
ASC
t
CSH
t
RAD
t
RCS
t
CAC
t
CPA
t
CPA
t
AA
t
AA
t
RAC
t
AA
Hi-Z
: “H” or “L”
t
RAL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
t
RCD
t
CP
t
CP
t
RRH
t
RCH
t
CAC
Data Out N
t
OFF
CAS
t
WRP
NOTE 1
t
WRH
NOTE 1:
Implementing WE at RAS time During a Read or Write Cycle is optional.
Doing so will facilitate compatibility with future EDO DRAMs.
t
OES
t
HCAS
t
WPZ
t
WPZ
t
RCH
t
RCS
t
RCS
t
RCH
t
WHZ
t
WHZ
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