參數(shù)資料
型號(hào): IBM11N16845CB
廠商: IBM Microeletronics
英文描述: 16M x 72 Chip-Kill Protect ECC-on-DIMM Module(16M x 72 帶糾錯(cuò)代碼保護(hù)的小外形雙列直插動(dòng)態(tài)RAM模塊)
中文描述: 1,600 × 72片,殺死保護(hù)ECC的上內(nèi)存模塊(1,600 × 72帶糾錯(cuò)代碼保護(hù)的小外形雙列直插動(dòng)態(tài)內(nèi)存模塊)
文件頁(yè)數(shù): 20/29頁(yè)
文件大小: 502K
代理商: IBM11N16845CB
IBM11N16845BB
IBM11N16845CB
16M x 72 Chip-Kill Protect ECC-on-DIMM Module
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 20 of 29
75H5487
GA14-4642-00
Revised 11/96
EDO Page Mode Late Write Cycle
t
HCAS
t
RP
RAS
Row
Address
WE
Column 1
Column 2
Column N
OE
Data In 1
Data In 2
Data In N
t
ASR
t
RAH
t
ASC
t
ASC
t
ASC
t
CAH
t
CAH
t
CAH
t
CWL
t
WP
t
CWL
t
WP
t
CWL
t
WP
t
OEH
t
OEH
t
OEH
t
DS
t
DH
t
ODD
t
DS
t
DH
t
ODD
t
DS
t
DH
D
IN
: “H” or “L”
t
RASP
t
RSH
t
HCAS
t
HCAS
t
HPC
t
CSH
t
ODD
Hi-Z
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
t
RCD
t
CP
t
CP
t
CRP
t
RAD
t
RCS
t
RCS
t
RCS
t
RWL
CAS
t
WRP
NOTE 1
t
WRH
NOTE 1:
Implementing WE at RAS time During a Read or Write Cycle is optional.
Doing so will facilitate compatibility with future EDO DRAMs.
相關(guān)PDF資料
PDF描述
IBM11N2645H 2M x 64 DRAM Module(2M x 64 動(dòng)態(tài)RAM模塊)
IBM11N2735H 2M x 72 DRAM Module(2M x 72 動(dòng)態(tài)RAM模塊)
IBM11N4645BB 4M x 64 DRAM Module(4M x 64 動(dòng)態(tài)RAM模塊)
IBM11N4645CB 4M x 64 DRAM Module(4M x 64 動(dòng)態(tài)RAM模塊)
IBM11N4735BB 4M x 72 DRAM Module(4M x 72 動(dòng)態(tài)RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBM14H5481 制造商:AVED Memory Products 功能描述:
IBM14H5540 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述:
IBM17R8251 制造商:AVED Memory Products 功能描述:
IBM17R8252 制造商:AVED Memory Products 功能描述:
IBM1805T 制造商:Schneider Electric 功能描述:IBM1805T