參數(shù)資料
型號(hào): IBM11N16845CB
廠商: IBM Microeletronics
英文描述: 16M x 72 Chip-Kill Protect ECC-on-DIMM Module(16M x 72 帶糾錯(cuò)代碼保護(hù)的小外形雙列直插動(dòng)態(tài)RAM模塊)
中文描述: 1,600 × 72片,殺死保護(hù)ECC的上內(nèi)存模塊(1,600 × 72帶糾錯(cuò)代碼保護(hù)的小外形雙列直插動(dòng)態(tài)內(nèi)存模塊)
文件頁(yè)數(shù): 21/29頁(yè)
文件大小: 502K
代理商: IBM11N16845CB
IBM11N16845BB
IBM11N16845CB
Preliminary
16M x 72 Chip-Kill Protect ECC-on-DIMM Module
75H5487
GA14-4642-00
Revised 11/96
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 21 of 29
EDO Page Mode Read Modify Write Cycle
Address
RAS
WE
OE
D
OUT
D
IN
D
IN
D
IN
t
RP
t
CP
t
CP
t
ASR
t
RAD
t
RAH
t
CAH
t
ASC
t
ASC
t
CAH
t
ASC
t
CAH
t
WP
t
CWL
t
WP
t
RCS
t
RCS
t
WP
t
CWL
t
RWL
t
CAC
t
OEH
t
OEH
t
OEH
D
OUT
D
OUT
t
CLZ
t
CLZ
t
ODD
t
ODD
t
DH
t
DH
t
CLZ
t
ODD
t
DH
D
IN
D
OUT
: “H” or “L”
Hi-Z
Hi-Z
t
RASP
t
CAS
t
HPRWC
t
CAS
t
RAL
t
AWD
t
CWD
t
AA
t
CPA
t
AA
t
AWD
t
CWD
t
RWD
t
AWD
t
CWD
t
RCS
t
RAC
t
AA
t
OEA
t
OEA
t
CAC
t
CAC
t
OEA
t
OEZ
t
OEZ
t
DS
t
DS
t
DS
Column 1
Row
Column 2
Column N
t
CSH
t
OEZ
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
V
IH
V
IL
t
RCD
t
CAS
t
CRP
t
CPA
CAS
t
WRP
NOTE 1
t
WRH
NOTE 1:
Implementing WE at RAS time During a Read or Write Cycle is optional.
Doing so will facilitate compatibility with future EDO DRAMs.
相關(guān)PDF資料
PDF描述
IBM11N2645H 2M x 64 DRAM Module(2M x 64 動(dòng)態(tài)RAM模塊)
IBM11N2735H 2M x 72 DRAM Module(2M x 72 動(dòng)態(tài)RAM模塊)
IBM11N4645BB 4M x 64 DRAM Module(4M x 64 動(dòng)態(tài)RAM模塊)
IBM11N4645CB 4M x 64 DRAM Module(4M x 64 動(dòng)態(tài)RAM模塊)
IBM11N4735BB 4M x 72 DRAM Module(4M x 72 動(dòng)態(tài)RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBM14H5481 制造商:AVED Memory Products 功能描述:
IBM14H5540 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述:
IBM17R8251 制造商:AVED Memory Products 功能描述:
IBM17R8252 制造商:AVED Memory Products 功能描述:
IBM1805T 制造商:Schneider Electric 功能描述:IBM1805T