參數(shù)資料
型號： IBM11N4645BB
廠商： IBM Microeletronics
英文描述： 4M x 64 DRAM Module(4M x 64 動態(tài)RAM模塊)
中文描述： 4米× 64內(nèi)存（4米× 64動態(tài)內(nèi)存模塊）
文件頁數(shù)： 30/31頁
文件大?。?/td> 585K
代理商： IBM11N4645BB
IBM11N4645BB
IBM11N4645CB
4M x 64/72 DRAM Module
IBM11N4735BB
IBM11N4735CB
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 30 of 31
50H8036. E22441E
Revised 5/98
Revision Log
Rev
Contents of Modification
1/96
Initial Release.
3/96
Added 11/11 addressing
Updated capacitance
Updated I
I(L),
I
OUT
Improved timings t
CAH,
t
CDD,
t
OEZ,
t
OFF,
PD timings
Increased t
OEZ
timing
Updated EDO timing diagrams
CBR timing diagram was changed to allow CAS to remain low for back-to-back CBR cycles.
Hidden Refresh Cycle (Read) timing diagram was changed to show data being turned off with RAS not CAS
5/96
Updated ordering information
Added bytes 13 and 14 to Serial Presence Detect table
12/96
Updated Serial Presence Detect table
6/97
Updated Serial Presence Detect table, added 50ns part
5/98
Eliminate 70ns speed sort, and added 50ns
Discontinued (9/98 - last order; 3/99 last ship)
相關(guān)PDF資料
PDF描述
IBM11N4645CB 4M x 64 DRAM Module(4M x 64 動態(tài)RAM模塊)
IBM11N4735BB 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊)
IBM11N4735CB 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊)
IBM11N4845BB 4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 帶糾錯代碼保護(hù)的小外形雙列直插動態(tài)RAM模塊)
IBM11N4845CB 4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 帶糾錯代碼保護(hù)的小外形雙列直插動態(tài)RAM模塊)
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