參數(shù)資料
型號: IBM11N4735BB
廠商: IBM Microeletronics
英文描述: 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊)
中文描述: 4米× 72內(nèi)存(4米× 72動態(tài)內(nèi)存模塊)
文件頁數(shù): 17/31頁
文件大?。?/td> 585K
代理商: IBM11N4735BB
IBM11N4645BB
IBM11N4645CB
IBM11N4735BB
IBM11N4735CB
4M x 64/72 DRAM Module
50H8036.E22441E
Revised 5/98
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 17 of 31
Read-Modify-Write-Cycle
D
IN
t
OEH
V
OL
V
OH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
t
RCD
t
RWC
t
RAS
t
CSH
t
CAS
t
RP
t
RAH
t
ASC
t
ASR
t
CAH
t
CWD
t
RCS
t
OEA
t
RWL
t
CWL
t
WP
t
DH
t
DS
t
DZC
t
CAC
t
CLZ
t
ODD
t
OEZ
t
RAC
RAS
Address
WE
OE
D
IN
D
OUT
Hi-Z
Hi-Z
D
OUT
Row
Column
: “H” or “L”
*
t
OEH
greater than or equal to t
CWL
*
Hi-Z
t
CRP
t
AWD
t
AA
t
RWD
t
RSH
t
RAD
t
DZO
CAS
t
WRP
NOTE 1
t
WRH
NOTE 1:
Implementing WE at RAS time During a Read or Write Cycle is optional.
Doing so will facilitate compatibility with future EDO DRAMs.
Discontinued (9/98 - last order; 3/99 last ship)
相關(guān)PDF資料
PDF描述
IBM11N4735CB 4M x 72 DRAM Module(4M x 72 動態(tài)RAM模塊)
IBM11N4845BB 4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 帶糾錯代碼保護的小外形雙列直插動態(tài)RAM模塊)
IBM11N4845CB 4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 帶糾錯代碼保護的小外形雙列直插動態(tài)RAM模塊)
IBM11N8645B 8M x 64 DRAM MODULE(8M x 64動態(tài)RAM模塊)
IBM11N8645C 8M x 64 DRAM MODULE(8M x 64動態(tài)RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBM14H5481 制造商:AVED Memory Products 功能描述:
IBM14H5540 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述:
IBM17R8251 制造商:AVED Memory Products 功能描述:
IBM17R8252 制造商:AVED Memory Products 功能描述:
IBM1805T 制造商:Schneider Electric 功能描述:IBM1805T