參數(shù)資料
型號(hào): IBM11N4735CB
廠商: IBM Microeletronics
英文描述: 4M x 72 DRAM Module(4M x 72 動(dòng)態(tài)RAM模塊)
中文描述: 4米× 72內(nèi)存(4米× 72動(dòng)態(tài)內(nèi)存模塊)
文件頁(yè)數(shù): 8/31頁(yè)
文件大小: 585K
代理商: IBM11N4735CB
IBM11N4645BB
IBM11N4645CB
4M x 64/72 DRAM Module
IBM11N4735BB
IBM11N4735CB
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 8 of 31
50H8036. E22441E
Revised 5/98
DC Electrical Characteristics
(T
A
= 0 to +70
°
C, V
CC
= 3.3V
±
0.3V)
Symbol
Parameter
11/11 Addressing
12/10 Addressing
Units Notes
x64
x72
x64
x72
Min. Max. Min. Max. Min. Max. Min. Max.
I
CC1
Operating Current
Average Power Supply Operating Current
(RAS, CAS, Address Cycling: t
RC
= t
RC
min.)
-50
1530
mA
1,2,3
-60
1360
1530
1200
1350
I
CC2
Standby Current (TTL)
Power Supply Standby Current
(RAS = CAS = V
IH
)
32
36
32
36
mA
I
CC3
RAS Only Refresh Current
Average Power Supply Current, RAS Only Mode
(RAS Cycling, CAS = V
IH
: t
RC
= t
RC
min)
-50
1530
mA
1, 3
-60
1360
1530
1200
1350
I
CC4
EDO Page Mode Current
Average Power Supply Current, EDO Page
Mode
(RAS = V
IL
, CAS, Address Cycling: t
HPC
= t
HPC
min)
-50
1530
mA
1, 2, 3
-60
1040
1170
1040
1170
I
CC5
Standby Current (CMOS)
Power Supply Standby Current
(RAS = CAS = V
CC
- 0.2V)
16
18
16
18
mA
I
CC6
CAS Before RAS Refresh Current
Average Power Supply Current, CAS Before
RAS Mode
(RAS, CAS, Cycling: t
RC
= t
RC
min)
-50
1530
mA
1, 3
-60
1360
1530
1200
1350
I
I(L)
Input Leakage Current
Input Leakage Current, any input
(0.0
V
(V
+ 0.3V)), All Other Pins Not
Under Test = 0V
RAS,
WE, OE
-80
+80
-90
+90
-80
+80
-90
+90
μ
A
CAS
-20
+20
-30
+30
-20
+20
-30
+30
Address -160 +160 -180 +180 -160 +160 -180 +180
I
O(L)
Output Leakage Current
(D
OUT
is disabled, 0.0
V
OUT
V
CC
)
-10
+10
-10
+10
-10
+10
-10
+10
μ
A
V
OH
Output Level (TTL)
Output “H” Level Voltage
( I
OUT
= -2.5mA)
2.4
V
CC
2.4
V
CC
2.4
V
CC
2.4
V
CC
V
V
OL
Output Level (TTL)
Output “L” Level Voltage
( I
OUT
= +2.1mA)
0.0
0.4
0.0
0.4
0.0
0.4
0.0
0.4
V
1. I
CC1
, I
CC3
, I
CC4
and I
CC6
depend on cycle rate.
2. I
CC1
and I
CC4
depend on output loading. Specified values are obtained with the output open.
3. Address can be changed once or less while RAS =V
IL
. In the case of I
CC4
, it can be changed once or less when CAS =V
IH
.
Discontinued (9/98 - last order; 3/99 last ship)
相關(guān)PDF資料
PDF描述
IBM11N4845BB 4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 帶糾錯(cuò)代碼保護(hù)的小外形雙列直插動(dòng)態(tài)RAM模塊)
IBM11N4845CB 4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 帶糾錯(cuò)代碼保護(hù)的小外形雙列直插動(dòng)態(tài)RAM模塊)
IBM11N8645B 8M x 64 DRAM MODULE(8M x 64動(dòng)態(tài)RAM模塊)
IBM11N8645C 8M x 64 DRAM MODULE(8M x 64動(dòng)態(tài)RAM模塊)
IBM11N8735B 8M x 72 DRAM MODULE(8M x 72動(dòng)態(tài)RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBM14H5481 制造商:AVED Memory Products 功能描述:
IBM14H5540 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述:
IBM17R8251 制造商:AVED Memory Products 功能描述:
IBM17R8252 制造商:AVED Memory Products 功能描述:
IBM1805T 制造商:Schneider Electric 功能描述:IBM1805T