參數(shù)資料
型號(hào): IBM11N4845BB
廠商: IBM Microeletronics
英文描述: 4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 帶糾錯(cuò)代碼保護(hù)的小外形雙列直插動(dòng)態(tài)RAM模塊)
中文描述: 4米× 72片,殺死保護(hù)ECC的上內(nèi)存模塊(4米× 72帶糾錯(cuò)代碼保護(hù)的小外形雙列直插動(dòng)態(tài)內(nèi)存模塊)
文件頁(yè)數(shù): 16/29頁(yè)
文件大?。?/td> 542K
代理商: IBM11N4845BB
IBM11N4845BB
IBM11N4845CB
4M x 72 Chip-Kill Protect ECC-on-DIMM Module
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 16 of 29
75H5485
GA14-4640-00
Revised 11/96
EDO Page Mode Read Cycle
t
RP
t
HCAS
Data Out 1
Data Out 2
OE
WE
RAS
Row
Address
Column 1
Column 2
Column N
t
OEA
t
DOH
t
DOH
t
OEZ
t
CLZ
t
CAC
V
IH
V
IL
t
ASR
t
RAH
t
ASC
t
ASC
t
CAH
t
CAH
t
CAH
D
OUT
t
RASP
t
CPRH
t
CRP
t
RSH
t
HCAS
t
HCAS
t
HPC
t
ASC
t
CSH
t
RAD
t
RCS
t
CAC
t
CPA
t
CPA
t
AA
t
AA
t
RAC
t
AA
Hi-Z
: “H” or “L”
t
RAL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
t
RCD
t
CP
t
CP
t
RRH
t
RCH
t
WP
t
CAC
Data Out N
t
OFF
CAS
t
WRP
NOTE 1
t
WRH
NOTE 1:
Implementing WE at RAS time During a Read or Write Cycle is optional.
Doing so will facilitate compatibility with future EDO DRAMs.
t
OES
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IBM11N4845CB 4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 帶糾錯(cuò)代碼保護(hù)的小外形雙列直插動(dòng)態(tài)RAM模塊)
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