- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379204 > IBM11N4845CB (IBM Microeletronics) 4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 帶糾錯代碼保護(hù)的小外形雙列直插動態(tài)RAM模塊) PDF資料下載
參數(shù)資料
| 型號： | IBM11N4845CB |
| 廠商： | IBM Microeletronics |
| 英文描述： | 4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 帶糾錯代碼保護(hù)的小外形雙列直插動態(tài)RAM模塊) |
| 中文描述： | 4米× 72片，殺死保護(hù)ECC的上內(nèi)存模塊（4米× 72帶糾錯代碼保護(hù)的小外形雙列直插動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 5/29頁 |
| 文件大小： | 542K |
| 代理商： | IBM11N4845CB |
第1頁第2頁第3頁第4頁當(dāng)前第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁
IBM11N4845BB
IBM11N4845CB
Preliminary
4M x 72 Chip-Kill Protect ECC-on-DIMM Module
75H5485
GA14-4640-00
Revised 11/96
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 5 of 29
Absolute Maximum Ratings
Symbol
Parameter
Rating (3.3V)
Units
Notes
V
CC
Power Supply Voltage
-0.5 to +4.6
V
1
V
IN
Input Voltage
-0.5 to min (V
CC
+ 0.5, 4.6)
V
1
V
IN/OUT
(SPD)
Input Voltage (Serial PD Device)
-0.3 to +6.5
V
1
V
OUT
Output Voltage
-0.5 to min (V
CC
+ 0.5, 4.6)
V
1
T
CASE
Operating Temperature of ASIC case
0 to +70
°
C
°
C
1
T
STG
Storage Temperature
-55 to +125
1
P
D
Power Dissipation
11/11 Addressing
12/10 Addressing
W
1, 2
x72
6.5
5.7
I
OUT
Short Circuit Output Current
50
mA
1
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only and functional opera-
tion of the device at these or any other conditions above those indicated is not implied. Exposure to absolute maximum rating con-
dition for extended periods may affect reliability.
2. Worst case power dissipation is for legal operation of DRAMs with the outputs open.
Recommended DC Operating Conditions
(T
C
= 0 to 60
°
C)
Symbol
Parameter
3.3V
Units
Notes
Min
Typ
Max
V
CC
Supply Voltage
3.15
3.3
3.45
V
1
V
IH
Input High Voltage
2.0
—
V
CC
+ 0.5
V
1, 2
V
IL
Input Low Voltage
-0.5
—
0.8
V
1, 2
1. All voltages referenced to V
SS.
2. V
IH
may overshoot to V
CC
+ 1.2V for pulse widths of
≤
4.0ns (or V
CC
+ 1.0V for
≤
8.0ns). Additionally, V
IL
may undershoot to -2.0V
for pulse widths
≤
4.0ns (or -1.0V for
≤
8.0ns). Pulse widths measured at 50% points with amplitude measured peak to DC refer-
ence.
Capacitance
(T
C
= 0 to +60
°
C, V
CC
= 3.3V
±
0.15V)
Max
Symbol
Parameter
x72
Units
C
I1
Input Capacitance (A0-A11)
120
pF
C
I2
Input Capacitance (RAS)
85
pF
C
I3
Input Capacitance (CAS)
30
pF
C
I4
Input Capacitance (SCL, SA0-3)
8
pF
C
I5
Input Capacitance (WE, OE)
15
pF
C
IO1
Input/Output Capacitance (DQ
X
, CB
X
)
11
pF
C
IO2
Input/Output Capacitance (SDA)
10
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IBM11N8645B | 8M x 64 DRAM MODULE(8M x 64動態(tài)RAM模塊) |
| IBM11N8645C | 8M x 64 DRAM MODULE(8M x 64動態(tài)RAM模塊) |
| IBM11N8735B | 8M x 72 DRAM MODULE(8M x 72動態(tài)RAM模塊) |
| IBM11N8735C | 8M x 72 DRAM MODULE(8M x 72動態(tài)RAM模塊) |
| IBM11N8645H | 8M x 64 DRAM Module(8M x 64 動態(tài)RAM模塊) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IBM14H5481 | 制造商:AVED Memory Products 功能描述: |
| IBM14H5540 | 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述: |
| IBM17R8251 | 制造商:AVED Memory Products 功能描述: |
| IBM17R8252 | 制造商:AVED Memory Products 功能描述: |
| IBM1805T | 制造商:Schneider Electric 功能描述:IBM1805T |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。