參數(shù)資料
型號(hào): IBM11N8645C
廠商: IBM Microeletronics
英文描述: 8M x 64 DRAM MODULE(8M x 64動(dòng)態(tài)RAM模塊)
中文描述: 8米× 64 DRAM模塊(8米× 64動(dòng)態(tài)內(nèi)存模塊)
文件頁數(shù): 14/31頁
文件大?。?/td> 626K
代理商: IBM11N8645C
IBM11N8645B
IBM11N8645C
8M x 64/72 DRAM MODULE
IBM11N8735B
IBM11N8735C
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 14 of 33
75H1747
SA14-4624-04
Revised 3/97
Read Cycle
RAS
V
IH
V
IL
V
IH
V
IL
Address
V
IH
V
IL
WE
V
IH
V
IL
OE
V
IH
V
IL
V
IH
V
IL
D
OUT
V
OH
V
OL
D
IN
Row
Column
Valid Data Out
t
RAS
t
RP
t
RC
t
CAS
t
CSH
t
CRP
t
RAH
t
ASC
t
CAH
t
ASR
t
RAD
t
RCS
t
DZC
t
CLZ
t
CAC
t
RAC
Hi-Z
Hi-Z
t
RRH
: “H”: or “L”
t
RCD
t
OEZ
Hi-Z
t
RSH
t
RAL
t
DZO
t
AA
t
OEA
CAS
t
ODD
t
CDD
t
RCH
t
OFF
t
WRP
t
WRH
NOTE 1
NOTE 1:
Implementing WE at RAS time During a Read or Write Cycle is optional.
Doing so will facilitate compatibility with future EDO DRAMs.
t
OES
Discontinued (9/98 - last order; 3/99 last ship)
相關(guān)PDF資料
PDF描述
IBM11N8735B 8M x 72 DRAM MODULE(8M x 72動(dòng)態(tài)RAM模塊)
IBM11N8735C 8M x 72 DRAM MODULE(8M x 72動(dòng)態(tài)RAM模塊)
IBM11N8645H 8M x 64 DRAM Module(8M x 64 動(dòng)態(tài)RAM模塊)
IBM11N8735H 8M x 72 DRAM Module(8M x 72 動(dòng)態(tài)RAM模塊)
IBM11N8845HB 8M x 72 Chip-Kill Protect ECC-on-DIMM Module(8M x 72 帶糾錯(cuò)代碼保護(hù)的小外形雙列直插動(dòng)態(tài)RAM模塊)
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