參數(shù)資料
型號(hào): IBM11N8645H
廠商: IBM Microeletronics
英文描述: 8M x 64 DRAM Module(8M x 64 動(dòng)態(tài)RAM模塊)
中文描述: 8米× 64內(nèi)存(8米× 64動(dòng)態(tài)內(nèi)存模塊)
文件頁(yè)數(shù): 21/31頁(yè)
文件大?。?/td> 564K
代理商: IBM11N8645H
IBM11N8645H
IBM11N8735H
8M x 64/72 DRAM Module
54H8530.E24352A
Revised 4/98
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 21 of 31
EDO Page Mode Early Write Cycle
t
HCAS
t
RP
RAS
Row
Address
WE
Column 1
Column 2
Column N
Data In 1
Data In 2
Data In N
t
ASR
t
RAH
t
CAH
t
WCH
t
DH
D
IN
t
RASP
t
RSH
t
HCAS
t
HCAS
t
HPC
t
RAD
t
ASC
t
ASC
t
CSH
t
CAH
t
ASC
t
CAH
t
WCH
t
WCS
t
WCH
t
WCS
t
WCS
t
DS
t
DS
t
DH
t
DH
t
DS
: “H” or “L”
t
CWL
t
RWL
t
WP
t
WP
t
WP
OE = Don’t care
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
t
RCD
t
CP
t
CP
t
CRP
CAS
t
WRP
NOTE 1
t
WRH
NOTE 1:
Implementing WE at RAS time During a Read or Write Cycle is optional.
Doing so will facilitate compatibility with future EDO DRAMs.
t
RAL
Discontinued (9/98 - last order; 3/99 last ship)
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