參數(shù)資料
型號: IBM11N8735B
廠商: IBM Microeletronics
英文描述: 8M x 72 DRAM MODULE(8M x 72動態(tài)RAM模塊)
中文描述: 8米× 72 DRAM模塊(8米× 72動態(tài)內(nèi)存模塊)
文件頁數(shù): 7/31頁
文件大小: 626K
代理商: IBM11N8735B
IBM11N8645B
IBM11N8645C
IBM11N8735B
IBM11N8735C
8M x 64/72 DRAM MODULE
75H1747
SA14-4624-04
Revised 3/97
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 7 of 33
Absolute Maximum Ratings
Symbol
Parameter
Rating (3.3V)
Units
Notes
V
CC
V
IN
Power Supply Voltage
-0.5 to +4.6
V
1
Input Voltage
-0.5 to min (V
CC
+ 0.5, 4.6)
V
1
V
IN/OUT
(SPD)
V
OUT
Input Voltage (Serial PD Device)
-0.3 to +6.5
V
1
Output Voltage
-0.5 to min (V
CC
+ 0.5, 4.6)
V
°
C
°
C
1
T
OPR
Operating Temperature
0 to +70
1
T
STG
Storage Temperature
-55 to +125
1
P
D
Power Dissipation
11/11 Addressing
9.8
11
12/10 Addressing
8.6
9.7
W
1, 2
x64
x72
I
OUT
Short Circuit Output Current
50
mA
1
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only and functional opera-
tion of the device at these or any other conditions above those indicated is not implied. Exposure to absolute maximum rating con-
dition for extended periods may affect reliability.
2. Maximum power occurs when all banks are active (refresh cycle).
Recommended DC Operating Conditions
(T
A
= 0 to 70
°
C)
Symbol
Parameter
3.3V
Units
Notes
Min
Typ
Max
V
CC
Supply Voltage
3.0
3.3
3.6
V
1
V
IH
Input High Voltage
2.0
V
CC
+ 0.5
V
1, 2
V
IL
Input Low Voltage
-0.5
0.8
V
1, 2
1. All voltages referenced to V
SS.
2. V
IH
may overshoot to V
CC
+ 1.2V for pulse widths of
4.0ns (or V
CC
+ 1.0V for
8.0ns). Additionally, V
IL
may undershoot to -2.0V
for pulse widths
4.0ns (or -1.0V for
8.0ns). Pulse widths measured at 50% points with amplitude measured peak to DC refer-
ence.
Capacitance
(T
A
= 0 to +70
°
C, V
CC
= 3.3V
±
0.3V)
Max
Symbol
Parameter
x64
x72
Units
C
I1
Input Capacitance (A0-A11)
160
200
pF
C
I2
Input Capacitance (RAS)
70
75
pF
C
I3
Input Capacitance (WE, OE)
90
100
pF
C
I4
Input Capacitance (CAS)
40
50
pF
C
I5
Input Capacitance (SCL, SA0-3)
8
8
pF
C
IO1
Input/Output Capacitance (DQ
X
, CB
X
)
22
22
pF
C
IO2
Input/Output Capacitance (SDA)
10
10
pF
Discontinued (9/98 - last order; 3/99 last ship)
相關(guān)PDF資料
PDF描述
IBM11N8735C 8M x 72 DRAM MODULE(8M x 72動態(tài)RAM模塊)
IBM11N8645H 8M x 64 DRAM Module(8M x 64 動態(tài)RAM模塊)
IBM11N8735H 8M x 72 DRAM Module(8M x 72 動態(tài)RAM模塊)
IBM11N8845HB 8M x 72 Chip-Kill Protect ECC-on-DIMM Module(8M x 72 帶糾錯代碼保護(hù)的小外形雙列直插動態(tài)RAM模塊)
IBM13M32734BCA 32M x 72 2-Bank Registered SDRAM Module(32M x 72 2組寄存同步動態(tài)RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBM14H5481 制造商:AVED Memory Products 功能描述:
IBM14H5540 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述:
IBM17R8251 制造商:AVED Memory Products 功能描述:
IBM17R8252 制造商:AVED Memory Products 功能描述:
IBM1805T 制造商:Schneider Electric 功能描述:IBM1805T