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IBM11N8645H
IBM11N8735H
8M x 64/72 DRAM Module
54H8530.E24352A
Revised 4/98
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 7 of 31
Absolute Maximum Ratings
Symbol
Parameter
Rating (3.3V)
Units
Notes
V
CC
Power Supply Voltage
-0.5 to +4.6
V
1
V
IN
Input Voltage
-0.5 to min (V
CC
+ 0.5, 4.6)
V
1
V
IN/OUT
(SPD)
Input Voltage (Serial PD Device)
-0.3 to +6.5
V
1
V
OUT
Output Voltage
-0.5 to min (V
CC
+ 0.5, 4.6)
V
°
C
°
C
1
T
OPR
Operating Temperature
0 to +70
1
T
STG
Storage Temperature
-55 to +125
1
P
D
Power Dissipation
x64
3.7
W
1, 2
x72
5.0
I
OUT
Short Circuit Output Current
50
mA
1
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only and functional opera-
tion of the device at these or any other conditions above those indicated is not implied. Exposure to absolute maximum rating con-
dition for extended periods may affect reliability.
2. P
D
Calculated for -60.
Recommended DC Operating Conditions
(T
A
= 0 to 70
°
C)
Symbol
Parameter
3.3V
Units
Notes
Min
Typ
Max
V
CC
Supply Voltage
3.0
3.3
3.6
V
1
V
IH
Input High Voltage
2.0
—
V
CC
+ 0.3
V
1, 2
V
IL
Input Low Voltage
-0.3
—
0.8
V
1, 2
1. All voltages referenced to V
SS.
2. V
IH
may overshoot to V
CC
+ 1.2V for pulse widths of
≤
4.0ns (or V
CC
+ 1.0V for
≤
8.0ns). Additionally, V
IL
may undershoot to -2.0V
for pulse widths
≤
4.0ns (or -1.0V for
≤
8.0ns). Pulse widths measured at 50% points with amplitude measured peak to DC refer-
ence.
Capacitance
(T
A
= 0 to +70
°
C, V
CC
= 3.3V
±
0.3V)
Symbol
Parameter
Max
Units
x64
x72
C
I1
Input Capacitance (A0-A11)
60
65
pF
C
I2
Input Capacitance (RAS, WE, OE)
50
55
pF
C
I3
Input Capacitance (CAS)
17
22
pF
C
I4
Input Capacitance (SCL, SA0-3)
8
8
pF
C
IO1
Input/Output Capacitance (DQ
X
, CB
X
)
13
13
pF
C
IO2
Input/Output Capacitance (SDA)
10
10
pF
Discontinued (9/98 - last order; 3/99 last ship)
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