參數(shù)資料
型號(hào): IBM11N8845HB
廠商: IBM Microeletronics
英文描述: 8M x 72 Chip-Kill Protect ECC-on-DIMM Module(8M x 72 帶糾錯(cuò)代碼保護(hù)的小外形雙列直插動(dòng)態(tài)RAM模塊)
中文描述: 8米× 72片,殺死保護(hù)ECC的上內(nèi)存模塊(8米× 72帶糾錯(cuò)代碼保護(hù)的小外形雙列直插動(dòng)態(tài)內(nèi)存模塊)
文件頁(yè)數(shù): 15/29頁(yè)
文件大小: 497K
代理商: IBM11N8845HB
IBM11N8845HB
Preliminary
8M x 72 Chip-Kill Protect ECC-on-DIMM Module
75H5486
GA14-4641-00
Revised 11/96
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 15 of 29
Read-Modify-Write-Cycle
D
IN
t
OEH
V
OL
V
OH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
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IL
V
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IL
V
IH
V
IL
V
IH
t
RCD
t
RWC
t
RAS
t
CSH
t
CAS
t
RP
t
RAH
t
ASC
t
ASR
t
CAH
t
CWD
t
RCS
t
OEA
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WP
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DH
t
DS
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DZC
t
CAC
t
CLZ
t
ODD
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t
RAC
RAS
Address
WE
OE
D
IN
D
OUT
Hi-Z
Hi-Z
D
OUT
Row
Column
: “H” or “L”
*
t
OEH
greater than or equal to t
CWL
*
Hi-Z
t
CRP
t
AWD
t
AA
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RWD
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WRP
NOTE 1
t
WRH
NOTE 1:
Implementing WE at RAS time During a Read or Write Cycle is optional.
Doing so will facilitate compatibility with future EDO DRAMs.
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