參數(shù)資料
型號: IBM11N8845HB
廠商: IBM Microeletronics
英文描述: 8M x 72 Chip-Kill Protect ECC-on-DIMM Module(8M x 72 帶糾錯代碼保護(hù)的小外形雙列直插動態(tài)RAM模塊)
中文描述: 8米× 72片,殺死保護(hù)ECC的上內(nèi)存模塊(8米× 72帶糾錯代碼保護(hù)的小外形雙列直插動態(tài)內(nèi)存模塊)
文件頁數(shù): 8/29頁
文件大?。?/td> 497K
代理商: IBM11N8845HB
IBM11N8845HB
8M x 72 Chip-Kill Protect ECC-on-DIMM Module
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 8 of 29
75H5486
GA14-4641-00
Revised 11/96
Write Cycle
Symbol
Parameter
-6R
Unit
Notes
Min
Max
t
WCS
Write Command Set Up Time
0
ns
1
t
WCH
Write Command Hold Time
10
ns
t
WP
Write Command Pulse Width
10
ns
t
RWL
Write Command to RAS Lead Time
10
ns
t
CWL
Write Command to CAS Lead Time
10
ns
t
DS
D
IN
Setup Time
0
ns
2
t
DH
D
IN
Hold Time
12
ns
2
1. t
WCS
, t
RWD
, t
CWD
, and t
AWD
are not restrictive parameters. They are included in the data sheet as electrical characteristics only. If
t
WCS
t
WCS
(min.), the entire cycle is an early write cycle and the data pin will remain open circuit (high impedance) through the
entire cycle; If t
RWD
t
RWD
(min.), t
CWD
t
CWD
(min.) and t
AWD
t
AWD
(min.), the cycle is a Read-Modify-Write cycle and the data will
contain read from the selected cell: If neither of the above sets of conditions are met, the condition of the data (at access time) is
indeterminate.
2. Data-in set-up and hold is measured from the latter of the two timings, CAS or WE.
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