參數(shù)資料
型號(hào)： IBM13M32734BCB
廠商： IBM Microeletronics
英文描述： 32M x 72 2-Bank Registered SDRAM Module(32M x 72 2組寄存同步動(dòng)態(tài)RAM模塊)
中文描述： 32M × 72配置2，銀行注冊(cè)內(nèi)存模塊（32M × 72配置2組寄存同步動(dòng)態(tài)內(nèi)存模塊）
文件頁數(shù)： 10/20頁
文件大?。?/td> 575K
代理商： IBM13M32734BCB
IBM13M32734BCB
32M x 72 2-Bank Registered SDRAM Module
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 10 of 20
19L7299.F38444A
8/99
Operating, Standby, and Refresh Currents
(T
A
= 0 to +70
°
C, V
DD
= 3.3V
±
0.3V)
Parameter
Symbol
Test Condition
Speed
-75A
Units Notes
Burst Operating Mode/Active Standby
I
CC4
/I
CC3
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
3190
mA
1, 2, 3
Burst Operating Mode/Precharge Standby
I
CC4
/I
CC2
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
3100
mA
1, 2, 3
Burst Operating Mode/Auto Refresh
I
CC4
/I
CC5
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
5080
mA
1, 2, 3
Non-burst Operating Mode/Active Standby
I
CC1
/I
CC3
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
2380
mA
1, 2, 3
Non-burst Operating Mode/Precharge Standby
I
CC1
/I
CC2
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
2290
mA
1, 2, 3
Non-burst Operating Mode/Auto Refresh
I
CC1
/I
CC5
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
4270
mA
1, 3
Active Standby/Active Standby
I
CC3
/I
CC3
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
1750
mA
3
Active Standby/Precharge Standby
I
CC3
/I
CC2
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
1660
mA
3
Active Standby/Auto Refresh
I
CC3
/I
CC5
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
3640
mA
1, 3
Precharge Standby/Precharge Standby
I
CC2
/I
CC2
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
1570
mA
3
Precharge Standby/Auto Refresh
I
CC2
/I
CC5
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
3550
mA
1, 3
Auto Refresh/Auto Refresh
I
CC5
/I
CC5
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
5530
mA
1, 3
Active Standby Power Down/Active Standby Power Down
I
CC3p
/I
CC3p
CKE
≤
V
IL
(max), t
CK
= min,
S0 - S3 =V
IH
(min)
418
mA
3
Active Standby Power Down/Precharge Standby Power Down
I
CC3p
/I
CC2p
CKE
≤
V
IL
(max), t
CK
= min,
S0 - S3 =V
IH
(min)
382
mA
3
Precharge Standby Power Down/Precharge Standby Power
Down
I
CC2p
/I
CC2p
CKE
≤
V
IL
(max), t
CK
= min,
S0 - S3 =V
IH
(min)
346
mA
3
Precharge Standby Non-power Down/Precharge Standby Non-
power Down (NO CLOCK)
I
CC2S
/I
CC2S
CKE
≥
V
IH
(min), t
CK
= Infinity,
S0 - S3 =V
IH
(min)
231
mA
3
Precharge Standby Power Down/Precharge Standby Power
Down (NO CLOCK)
I
CC2PS
/I
CC2PS
CKE
≥
V
IH
(min), t
CK
= Infinity,
S0 - S3 =V
IH
(min)
51
mA
3
1. These parameters depend on the cycle rate and are measured with the cycle determined by the minimum value of t
CK
and t
RC
.
Input signals are changed once during t
CK
(min). t
CK
(min) = 7.5ns.
2. The specified values are obtained with the output open.
3. These parameters and symbols refer to a combination of physical bank 0/physical bank 1.
相關(guān)PDF資料
PDF描述
IBM13M32734BCC 32M x 72 2 Bank Registered SDRAM Module(32M x 72 2組寄存同步動(dòng)態(tài)RAM模塊)
IBM13M32734BCD 32M x 72 2-Bank Registered/Buffered SDRAM Module(32M x 72 2組寄存/緩沖同步動(dòng)態(tài)RAM模塊)
IBM13M32734BCE 32M x 72 2-Bank Registered/Buffered SDRAM Module(32M x 72 2組寄存/緩沖同步動(dòng)態(tài)RAM模塊)
IBM13M32734CCA 32M x 72 1 Bank Registered/Buffered SDRAM Module(32M x 72 1組寄存/緩沖同步動(dòng)態(tài)RAM模塊)
IBM13M32734CCB 32M x 72 1-Bank Registered / Buffered SDRAM Module(32M x 72 1組寄存/緩沖同步動(dòng)態(tài)RAM模塊)
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