參數(shù)資料
型號: IBM13M32734BCB
廠商: IBM Microeletronics
英文描述: 32M x 72 2-Bank Registered SDRAM Module(32M x 72 2組寄存同步動態(tài)RAM模塊)
中文描述: 32M × 72配置2,銀行注冊內(nèi)存模塊(32M × 72配置2組寄存同步動態(tài)內(nèi)存模塊)
文件頁數(shù): 14/20頁
文件大?。?/td> 575K
代理商: IBM13M32734BCB
IBM13M32734BCB
32M x 72 2-Bank Registered SDRAM Module
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 14 of 20
19L7299.F38444A
8/99
Read Cycle
Symbol
Parameter
-75A
Units
Notes
Min.
Max.
t
OH
t
LZ
t
HZ3
t
DQZ
Data Out Hold Time
2.45
ns
Data Out to Low Impedance Time
0.6
ns
Data Out to High Impedance Time
3.6
6.6
ns
1
DQM Data Out Disable Latency
3
CLK
1. Referenced to the time at which the output achieves the open circuit condition, not to output voltage levels.
Write Cycle
Symbol
Parameter
-75A
Units
Min.
Max.
t
DS
t
DH
t
DPL
t
DAL3
t
DQW
Data In Setup Time
1.75
ns
Data In Hold Time
1.05
ns
Data input to Precharge
15
ns
Data in to Active Delay (CAS Latency = 3)
5
CLK
DQM Write Mask Latency
1
CLK
Presence Detect Read and Write Cycle
Symbol
f
SCL
T
I
t
AA
t
BUF
t
HD:STA
t
LOW
t
HIGH
t
SU:STA
t
HD:DAT
t
SU:DAT
t
r
t
f
t
SU:STO
t
DH
t
WR
Parameter
Min.
Max.
Units
Notes
SCL Clock Frequency
100
KHz
Noise Suppression Time Constant at SCL, SDA Inputs
100
ns
SCL Low to SDA Data Out Valid
0.3
3.5
μ
s
Time the Bus Must Be Free before a New Transmission Can Start
4.7
μ
s
Start Condition Hold Time
4.0
μ
s
Clock Low Period
4.7
μ
s
Clock High Period
4.0
μ
s
Start Condition Setup Time (for a Repeated Start Condition)
4.7
μ
s
Data in Hold Time
0
μ
s
Data in Setup Time
250
ns
SDA and SCL Rise Time
1
μ
s
SDA and SCL Fall Time
300
ns
Stop Condition Setup Time
4.7
μ
s
Data Out Hold Time
300
ns
Write Cycle Time
15
ms
1
1. The write cycle time (t
WR
) is the time from a valid stop condition of a write sequence to the end of the internal erase/program cycle.
During the write cycle, the bus interface circuits are disabled, SDA is allowed to remain high per the bus-level pull-up resistor, and
the device does not respond to its slave address.
相關PDF資料
PDF描述
IBM13M32734BCC 32M x 72 2 Bank Registered SDRAM Module(32M x 72 2組寄存同步動態(tài)RAM模塊)
IBM13M32734BCD 32M x 72 2-Bank Registered/Buffered SDRAM Module(32M x 72 2組寄存/緩沖同步動態(tài)RAM模塊)
IBM13M32734BCE 32M x 72 2-Bank Registered/Buffered SDRAM Module(32M x 72 2組寄存/緩沖同步動態(tài)RAM模塊)
IBM13M32734CCA 32M x 72 1 Bank Registered/Buffered SDRAM Module(32M x 72 1組寄存/緩沖同步動態(tài)RAM模塊)
IBM13M32734CCB 32M x 72 1-Bank Registered / Buffered SDRAM Module(32M x 72 1組寄存/緩沖同步動態(tài)RAM模塊)
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