參數(shù)資料
型號: IBM13M32734BCC
廠商: IBM Microeletronics
英文描述: 32M x 72 2 Bank Registered SDRAM Module(32M x 72 2組寄存同步動態(tài)RAM模塊)
中文描述: 32M × 72配置2銀行注冊內(nèi)存模塊(32M × 72配置2組寄存同步動態(tài)內(nèi)存模塊)
文件頁數(shù): 9/19頁
文件大?。?/td> 388K
代理商: IBM13M32734BCC
IBM13M32734BCC
Preliminary
32M x 72 2 Bank Registered SDRAM Module
88H5165.E24449
4/98
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 9 of 19
Absolute Maximum Ratings
Symbol
V
DD
Parameter
Rating
-0.3 to +4.6
-1.0 to +4.6
-0.3 to +6.5
0 - V
DD
0 - V
DD
-1.0 to +4.6
-0.3 to +6.5
0 to +70
Units
Notes
Power Supply Voltage
V
1
V
IN
Input Voltage
SDRAM Devices
Serial PD Device
Register
PLL
SDRAM Devices
Serial PD Device
V
OUT
Output Voltage
T
A
T
STG
P
D
I
OUT
F
MIN
Operating Temperature (ambient)
°
C
°
C
W
mA
MHz
1
Storage Temperature
Power Dissipation
Short Circuit Output Current
Minimum Operating Frequency
-55 to +125
20.2
50
66
1
1, 2
1
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
2. Maximum power is calculated assuming physical Bank 0 is in Burst Operating Mode while physical Bank 1 is in AutoRefresh
Mode.
Recommended DC Operating Conditions
(T
A
= 0 to 70C)
Symbol
Parameter
Rating
Typ.
3.3
Units
Notes
Min.
3.0
Max.
3.6
V
DD
V
IH
V
IL
Supply Voltage
V
1
Input High Voltage
2.0
V
DD
+ 0.3
0.8
V
1
Input Low Voltage
-0.3
V
1
1. All voltages referenced to V
SS
.
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