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參數(shù)資料
| 型號(hào)： | IBM13M32734BCD |
| 廠商： | IBM Microeletronics |
| 英文描述： | 32M x 72 2-Bank Registered/Buffered SDRAM Module(32M x 72 2組寄存/緩沖同步動(dòng)態(tài)RAM模塊) |
| 中文描述： | 32M × 72配置2，銀行注冊(cè)/緩沖內(nèi)存模組（32M × 72配置2組寄存/緩沖同步動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 9/20頁 |
| 文件大?。?/td> | 579K |
| 代理商： | IBM13M32734BCD |
IBM13M32734BCD
32M x 72 2-Bank Registered/Buffered SDRAM Module
19L7143.E93758B
2/99
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 9 of 20
Absolute Maximum Ratings
Symbol
V
DD
Parameter
Rating
-0.3 to +4.6
-1.0 to +4.6
-0.3 to +6.5
0 - V
DD
0 - V
DD
-1.0 to +4.6
-0.3 to +6.5
0 to +70
Units
Notes
Power Supply Voltage
V
1
V
IN
Input Voltage
SDRAM Devices
Serial PD Device
Register
PLL
V
OUT
Output Voltage
SDRAM Devices
Serial PD Device
T
A
T
STG
P
D
I
OUT
F
MIN
Operating Temperature (ambient)
°
C
°
C
1
Storage Temperature
-55 to +125
1
Power Dissipation
20.3
W
1, 2
Short Circuit Output Current
50
mA
1
Minimum Operating Frequency
66
MHz
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
2. Maximum power is calculated assuming physical Bank 0 is in AutoRefresh mode and physical Bank 1 is in AutoRefresh mode.
Recommended DC Operating Conditions
(T
A
= 0 to 70
°
C)
Symbol
Parameter
Rating
Typ.
3.3
Units
Notes
Min.
3.0
Max.
3.6
V
DD
V
IH
V
IL
Supply Voltage
V
1
Input High Voltage
2.0
—
V
DD
+ 0.3
0.8
V
1
Input Low Voltage
-0.3
—
V
1
1. All voltages referenced to V
SS
.
Discontinued (8/99 - last order; 12/99 - last ship)
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