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參數(shù)資料
| 型號(hào)： | IBM13M32734BCE |
| 廠商： | IBM Microeletronics |
| 英文描述： | 32M x 72 2-Bank Registered/Buffered SDRAM Module(32M x 72 2組寄存/緩沖同步動(dòng)態(tài)RAM模塊) |
| 中文描述： | 32M × 72配置2，銀行注冊/緩沖內(nèi)存模組（32M × 72配置2組寄存/緩沖同步動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 15/21頁 |
| 文件大?。?/td> | 328K |
| 代理商： | IBM13M32734BCE |
IBM13M32734BCE
32M x 72 2-Bank Registered/Buffered SDRAM Module
19L7293.E93875A
8/99
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 15 of 21
Clock and Clock Enable Parameters
Symbol
Parameter
-260
(Device CL, t
RCD
, t
RP
= 2, 2, 2)
-360
(Device CL, t
RCD
, t
RP
= 3, 2, 2)
Units Notes
Min.
Max.
Min.
Max.
t
CK4
Clock Cycle Time,
DIMM CAS Latency = 4
Registered
10
1000
10
1000
ns
1
t
CK3
Clock Cycle Time,
DIMM CAS Latency = 3
Registered
10
1000
15
1000
ns
1
Buffered
10
1000
10
1000
ns
t
CK2
Clock Cycle Time,
DIMM CAS Latency = 2
Buffered
10
1000
15
1000
ns
1
t
AC4
Clock Access Time,
DIMM CAS Latency = 4
Registered
—
7.2
—
7.2
ns
1, 2
t
AC3
Clock Access Time,
DIMM CAS Latency = 3
Registered
—
7.2
—
10.2
ns
1, 2
Buffered
—
7.2
—
7.2
ns
t
AC2
Clock Access Time,
DIMM CAS Latency = 2
Buffered
—
7.2
—
10.2
ns
1, 2
t
CKH
Clock High Pulse Width
3
—
3
—
ns
3
t
CKL
Clock Low Pulse Width
3
—
3
—
ns
3
t
CES
Clock Enable Setup Time
Registered
2.1
—
2.1
—
ns
1
Buffered
7.4
—
7.4
—
ns
t
CEH
Clock Enable Hold Time
Registered
1.5
—
1.5
—
ns
1
Buffered
0
—
0
—
ns
t
SB
Power Down Mode Entry Time
0
10
0
10
ns
t
T
Transition Time (Rise and Fall)
0.5
10
0.5
10
ns
1. DIMM CAS latency = device CL [clock cycles] + 1 for Register mode; DIMM CAS latency is one clock less for Buffer mode.
2. Access time is measured at 1.4V. See AC output load circuit.
3. t
CKH
is the pulse width of CLK measured from the positive edge to the negative edge referenced to V
IH
(min). t
CKL
is the pulse
width of CLK measured from the negative edge to the positive edge referenced to V
IL
(max).
Discontinued (4/1/00 - last order; 7/31/00 - last ship)
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