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| 型號： | IBM13M32734CCA |
| 廠商： | IBM Microeletronics |
| 英文描述： | 32M x 72 1 Bank Registered/Buffered SDRAM Module(32M x 72 1組寄存/緩沖同步動態(tài)RAM模塊) |
| 中文描述： | 32M × 72配置1銀行注冊/緩沖內(nèi)存模組（32M × 72配置1組寄存/緩沖同步動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 6/20頁 |
| 文件大?。?/td> | 658K |
| 代理商： | IBM13M32734CCA |
IBM13M32734CCA
32M x 72 1 Bank Registered/Buffered SDRAM Module
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 6 of 20
09K3541.F38352
10/99
Input/Output Functional Description
Symbol
Type
Signal
Polarity
Function
CK0 - CK3
Input
Pulse
Positive
Edge
The system clock inputs. All the SDRAM inputs are sampled on the rising edge of their
associated clock. CK0 drives the PLL. CK1, CK2, and CK3 are terminated.
CKE0
Input
Level
Active
High
Activates the SDRAM CK signal when high and deactivates the CK signal when low. By
deactivating the clocks, CKE low initiates the Power Down mode, the Suspend mode, or
the Self Refresh mode.
S0, S2
Input
Pulse
Active Low
Enables the associated SDRAM command decoder when low and disables the command
decoder when high. When the command decoder is disabled, new commands are
ignored but previous operations continue.
RAS, CAS
WE
Input
Pulse
Active LowWhen sampled at the positive rising edge of the clock, CAS, RAS, and WE define the
operation to be executed by the SDRAM.
BA0, 1
Input
Level
—
Selects which SDRAM bank of four is activated.
A0 - A9, A11
A10/AP
Input
Level
—
During a Bank Activate command cycle, A0-A11 defines the row address (RA0-RA11)
when sampled at the rising clock edge.
During a Read or Write command cycle, A0-A9 and A11 defines the column address
(CA0-CA9, CA11) when sampled at the rising clock edge. In addition to the column
address, AP is used to invoke autoprecharge operation at the end of the burst read or
write cycle. If AP is high, autoprecharge is selected and BA0, BA1 defines the bank to be
precharged. If AP is low, autoprecharge is disabled.
During a Precharge command cycle, AP is used in conjunction with BA0, BA1 to control
which bank(s) to precharge. If AP is high, all banks will be precharged regardless of the
state of BA0 or BA1. If AP is low, BA0 and BA1 are used to define which bank to pre-
charge.
DQ0 - DQ63,
CB0 - CB7
Input
Output
Level
—
Data and Check Bit Input/Output pins
DQMB0 -
DQMB7
Input
Pulse
Active
High
The Data Input/Output masks, associated with one data byte, place the DQ buffers in a
high-impedance state when sampled high. In Read mode, DQMB has a latency of two
clock cycles in Buffered mode or three clock cycles in Registered mode, and controls the
output buffers like an output enable.
In Write mode, DQMB has a zero clock latency in Buffered mode and a latency of one
clock cycle in Registered mode. In this case, DQMB operates as a byte mask by allowing
input data to be written if it is low but blocking the write operation if it is high.
V
DD
, V
SS
Supply
Power and ground for the module.
REGE
Input
Level
Active
High
(Register
Mode
Enable)
The Register Enable pin is used to permit the DIMM to operate in “buffered” mode (inputs
re-driven asynchronously) or “registered” mode (signals re-driven to SDRAMs when
clock rises, and held valid until next rising clock).
SA0 - 2
Input
Level
—
These signals are tied at the system planar to either V
SS
or V
DD
to configure the serial
SPD EEPROM.
SDA
Input
Output
Level
—
This bidirectional pin is used to transfer data into or out of the SPD EEPROM. A resistor
must be connected from the SDA bus line to V
DD
to act as a pullup.
SCL
Input
Pulse
—
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be
connected from the SCL bus time to V
DD
to act as a pullup.
WP
Input
Level
Active
High
This signal is pulled low on the DIMM to enable data to be written into the last 128 bytes
of the SPD EEPROM.
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