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參數(shù)資料
| 型號(hào)： | IBM13M64734BCA |
| 廠商： | IBM Microeletronics |
| 英文描述： | 64M x 72 1 Bank Registered/Buffered SDRAM Module(64M x 72 1組寄存/緩沖同步動(dòng)態(tài)RAM模塊) |
| 中文描述： | 64米× 72 1銀行注冊(cè)/緩沖內(nèi)存模組（64米× 72 1組寄存/緩沖同步動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 7/20頁(yè) |
| 文件大小： | 499K |
| 代理商： | IBM13M64734BCA |
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IBM13M64734BCA
Preliminary
64M x 72 1 Bank Registered/Buffered SDRAM Module
19L7159.E93855
2/00
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 7 of 20
Serial Presence Detect
(Part 1 of 2)
Byte #
Description
SPD Entry Value
Serial PD Data Entry
(Hexadecimal)
Notes
0
Number of Serial PD Bytes Written during Production
128
80
1
Total Number of Bytes in Serial PD device
256
08
2
Fundamental Memory Type
SDRAM
04
3
Number of Row Addresses on Assembly
13
0D
4
Number of Column Addresses on Assembly
11
0B
5
Number of DIMM Banks
1
01
6 - 7
Data Width of Assembly
x72
4800
8
Assembly Voltage Interface Levels
LVTTL
01
9
SDRAM Device Cycle Time (CL = 3)
10ns
10
1, 2
10
SDRAM Device Access Time from
Clock at CL=3
-260
6.0ns
60
11
Assembly Error Detection/Correction Scheme
ECC
02
12
Assembly Refresh Rate/Type
SR/1X(7.813us)
82
13
SDRAM Device Width
x4
04
14
Error Checking SDRAM Device Width
x4
04
15
SDRAM Device Attr: Min Clk Delay, Random Col
Access
1 Clock
01
16
SDRAM Device Attributes: Burst Lengths Supported
1,2,4,8
0F
17
SDRAM Device Attributes: Number of Device Banks
4
04
18
SDRAM Device Attributes: CAS Latency
2, 3
06
19
SDRAM Device Attributes: CS Latency
0
01
20
SDRAM Device Attributes: WE Latency
0
01
21
SDRAM Module Attributes
Registered/Buffered with
PLL
IF
22
SDRAM Device Attributes: General
Write-1/Read Burst, Pre-
charge All, Auto-Precharge
0E
23
Minimum Clock Cycle at CLX-1 (CL =
2)
-260
10.0ns
A0
1,2
-360
15.0ns
F0
24
Maximum Data Access Time (t
AC
)
from Clock at CLX-1 (CL = 2)
-260
6.0ns
60
-360
9.0ns
90
25
Minimum Clock Cycle Time at CLX-2 (CL = 1)
N/A
00
26
Maximum Data Access Time (t
AC
) from Clock at CLX-2
(CL = 1)
N/A
00
27
Minimum Row Precharge Time (t
RP
)
20.0ns
14
1. In a registered DIMM, data is delayed an additional clock cycle due to the on-DIMM pipeline register (i.e., Device CL [clock cycles]
+ 1 = DIMM CAS latency).
2. Minimum application clock cycle time for the -360 is 10ns (100MHz).
3. cc = Checksum Data byte, 00-FF (Hex)
4. “R” = Alphanumeric revision code, A-Z, 0-9
5. rr = ASCII coded revision code byte “R”
6. ww = Binary coded decimal week code, 01-52 (Decimal)
01-34 (Hex)
7. yy = Binary coded decimal year code, 00-99 (Decimal)
00-63 (Hex)
8. ss = Serial number data byte, 00-FF (Hex)
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