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| 型號： | IBM13Q16734HCB |
| 廠商： | IBM Microeletronics |
| 英文描述： | 16M x 72 Registered SDRAM Module(16M x 72 200腳寄存同步動態(tài)RAM模塊) |
| 中文描述： | 16米x 72注冊內(nèi)存模塊（16米x 72 200腳寄存同步動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 275K |
| 代理商： | IBM13Q16734HCB |
IBM13Q16734HCB
16M x 72 Registered SDRAM Module
04K8915.C75644E
6/00
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 5 of 14
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
Notes
V
DD
Power Supply Voltage
-0.3 to +4.6
V
1
V
IN
Input Voltage
-0.3 to +4.6
V
1
V
OUT
Output Voltage
-0.3 to +4.6
V
1
T
OPR
Operating Temperature
0 to +70
°
C
1
T
STG
Storage Temperature
-55 to +125
°
C
1
P
D
Power Dissipation
8.3
W
1
I
OUT
Short Circuit Output Current
50
mA
1
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Recommended DC Operating Conditions
(T
A
= 0 to 70
°
C)
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
V
DD
Supply Voltage
3.3
—
3.6
V
1
V
IH
Input High Voltage
2.0
—
V
DD
+ 0.3
V
1
V
IL
Input Low Voltage
-0.3
—
0.8
V
1
1. All voltages referenced to V
SS
and VSSQ.
Capacitance
(T
A
= 25
°
C, f=1MHz, V
DD
= 3.3V to 3.6V)
Symbol
Parameter
Max.
Units
Notes
C
I1
Input Capacitance (A0 - A9, A10/AP, A11)
15
pF
C
I2
Input Capacitance (RAS, CAS, WE, DQM, PDE)
15
pF
C
I3
Input Capacitance (S0, S1, CKE0, CKE1)
25
pF
C
I4
Input Capacitance (CK0)
6
pF
C
I01
Input/Output Capacitance (DQ0 - DQ71)
25
pF
C
01
Output Capacitance (PD1- PD6)
12
pF
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