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參數(shù)資料
| 型號： | IBM13T16644NPA |
| 廠商： | IBM Microeletronics |
| 英文描述： | 16M x 64 PC100 SDRAM(1MB PC100 同步動態(tài)RAM) |
| 中文描述： | 16米x 64 PC100的SDRAM內(nèi)存（1MB的PC100的同步動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 11/17頁 |
| 文件大?。?/td> | 407K |
| 代理商： | IBM13T16644NPA |
IBM13T16644NPA
16M x 64 PC100 SDRAM SO DIMM
09K1470.E92279
11/99
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 11 of 17
Clock and Clock Enable Parameters
Symbol
Parameter
-360
(CL, t
RCD
, t
RP
= 3 / 2 / 2)
Units
Notes
Min.
Max.
t
CK3
Clock Cycle Time, CAS Latency = 3
10
1000
ns
t
CK2
Clock Cycle Time, CAS Latency = 2
15
1000
ns
1
t
AC3
Clock Access Time, CAS Latency = 3
—
6
ns
2
t
AC2
Clock Access Time, CAS Latency = 2
—
9
ns
2
t
CKH
Clock High Pulse Width
3
—
ns
3
t
CKL
Clock Low Pulse Width
3
—
ns
3
t
CES
Clock Enable Set-up Time
2
—
ns
t
CEH
Clock Enable Hold Time
1
—
ns
t
SB
Power down mode Entry Time
0
10
ns
t
T
Transition Time (Rise and Fall)
0.5
10
ns
1. For -360 sort, 66Mhz clock: CAS Latency = 2.
2. Access time is measured at 1.4V. See AC Characteristics: notes: 1, 2, 3, 4 .
3. t
CKH
is the pulse width of CLK measured from the positive edge to the negative edge referenced to V
IH
(min). t
CKL
is the pulse
width of CLK measured from the negative edge to the positive edge referenced to V
IL
(max).
Common Parameters
Symbol
Parameter
-360
(CL, t
RCD
, t
RP
= 3 / 2 / 2)
Units Notes
Min.
Max.
t
CS
Command Setup Time
2
—
ns
t
CH
Command Hold Time
1
—
ns
t
AS
Address and Bank Select Set-up Time
2
—
ns
t
AH
Address and Bank Select Hold Time
1
—
ns
t
RCD
RAS to CAS Delay
20
—
ns
1
t
RC
Bank Cycle Time
70
—
ns
1
t
RAS
Active Command Period
50
100000
ns
1
t
RP
Precharge Time
20
—
ns
1
t
RRD
Bank to Bank Delay Time
20
—
ns
1
t
CCD
CAS to CAS Delay Time
1
—
CLK
1. These parameters account for the number of clock cycle and depend on the operating frequency of the clock, as follows:
the number of clock cycles = specified value of timing / clock period (count fractions as a whole number).
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