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參數(shù)資料
| 型號： | IBM13T8644HPB |
| 廠商： | IBM Microeletronics |
| 英文描述： | 8M x 64 SDRAM SO DIMM（Small Outline Dual In-line Memory Modules）(8M x 64 144腳小外形雙列直插同步動態(tài)RAM模塊) |
| 中文描述： | 8米× 64 SDRAM的內(nèi)存蘇（小外形雙列直插式內(nèi)存模塊）（8米× 64 144腳小外形雙列直插同步動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 1/17頁 |
| 文件大小： | 325K |
| 代理商： | IBM13T8644HPB |
IBM13T8644HPB
IBM13T8644HPC
8M x 64 SDRAM SO DIMM
01L5951.E24562B
5/99
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 17
Features
144 Pin JEDEC Standard, 8 Byte Small Outline
Dual-In-line Memory Module
8Mx64 Synchronous DRAM SO DIMM
Low Power
Performance:
Inputs and outputs are LVTTL (3.3V) compatible
Single 3.3V
±
0.3V Power Supply
Single Pulsed RAS interface
SDRAMs have 4 internal banks
Fully Synchronous to positive Clock Edge
Programmable Operation:
- CAS Latency: 2, 3
- Burst Type: Sequential or Interleave
- Burst Length: 1, 2, 4, 8, Full-Page (Full-
Page supports Sequential burst only)
- Operation: Burst Read and Write or Multiple
Burst Read with Single Write
Data Mask for Byte Read/Write control
Auto Refresh (CBR) and Self Refresh
Automatic and controlled Precharge Commands
Suspend Mode and Power Down Mode
12/9/2 Addressing (Row/Column/Bank)
4096 refresh cycles distributed across 64ms
Serial Presence Detect
Card size:
- 2.66" x 1.15" x 0.149" (IBM13T8644HPB)
- 2.66" x 1.05" x 0.149" (IBM13T8644HPC)
Gold contacts
SDRAM
S
in TSOP Type II Package
Description
IBM13T8644HPB and IBM13T8644HPC are
144-pin Synchronous DRAM Small Outline Dual
In-line Memory Modules (SO DIMMs) organized as
8Mx64 high-speed memory arrays. These SO
DIMMs use eight 8Mx8 SDRAMs in 400mil TSOP II
packages. They achieve high speed data transfer
rates of up to 100MHz by employing a prefetch/pipe-
line hybrid architecture that supports the JEDEC 1N
rule while allowing very low burst power.
The SO DIMM is intended to comply with all JEDEC
standards set for 144 pin SDRAM SO DIMMs.
All control, address, and data input/output circuits
are synchronized with the positive edge of the exter-
nally supplied clock inputs. All inputs are sampled at
the positive edge of each externally supplied clock
(CK0, CK1). Internal operating modes are defined
by combinations of the RAS, CAS, WE, S0, DQMB,
and CKE0 signals. A command decoder initiates the
Card Outline
necessary timings for each operation. A 12 bit
address bus accepts address information in a
row/column multiplexing arrangement.
Prior to any access operation, the CAS latency,
burst type, burst length, and burst operation type
must be programmed into the SO DIMM by address
inputs A0-A9 during the Mode Register Set cycle.
The SO DIMM uses serial presence detects imple-
mented via a serial EEPROM using the two pin IIC
protocol. The first 128 bytes of serial PD data are
used by the DIMM manufacturer. The last 128 bytes
are available to the customer.
All IBM 144-pin SO DIMMs provide a high perfor-
mance, flexible 8-byte interface in a 2.66" long
space-saving footprint. Related products are in the
EDO DRAM SO DIMM family.
-360
3
-10
3
Units
CAS Latency
f
CK
Clock Frequency
t
CK
Clock Cycle
t
AC
Clock Access Time
100
100
MHz
10
10
ns
6
7
ns
1
2
143
144
(Front)
(Back)
59
60
61
62
IBM11M4730C4M x 72 E12/10, 5.0V, Au.
Discontinued (8/99 - last order; 12/99 - last ship)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IBM13T8644HPC | 8M x 64 SDRAM SO DIMM（Small Outline Dual In-line Memory Modules）(8M x 64 144腳小外形雙列直插同步動態(tài)RAM模塊) |
| IBM13T8644HPD | One Bank 8M x 64 SDRAM SO DIMM（Small Outline Dual In-line Memory Module）(1組 8M x 64 PC100小外形雙列直插同步動態(tài)RAM模塊) |
| IBM13T8644HPE | One Bank 8M x 64 SDRAM SO DIMM（Small Outline Dual In-line Memory Module）(1組 8M x 64 PC100小外形雙列直插式同步動態(tài)RAM模塊) |
| IBM13T8644MPD | Two Bank 8M x 64 SDRAM SO DIMM（Small Outline Dual In-line Memory Module）(2組 8M x 64 PC100小外形雙列直插同步動態(tài)RAM模塊) |
| IBM13T8644MPE | 8M x 64 PC100 SDRAM SO DIMM（Small Outline Dual In-line Memory Module）(8M x 64 PC100小外形雙列直插式同步動態(tài)RAM模塊) |
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