參數(shù)資料
型號(hào)： IBM13V51649AN
廠(chǎng)商： IBM Microeletronics
英文描述： 512K x 64 SGRAM SO DIMM（Small Outline Dual In-line Memory Modules）(512K x 64 144腳小外形雙列直插同步圖形RAM模塊)
中文描述： 為512k × 64 SGRAM蘇內(nèi)存（小外形雙列直插式內(nèi)存模塊）（為512k × 64 144腳小外形雙列直插同步圖形內(nèi)存模塊）
文件頁(yè)數(shù)： 6/14頁(yè)
文件大?。?/td> 224K
代理商： IBM13V51649AN
IBM13V25649AN IBM13V51649AN
256K/512K x 64 SGRAM SO DIMM
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 6 of 14
88H4121.E24358
Revised 1/98
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
Notes
V
DD
Power Supply Voltage
-0.3 to +4.6
V
1
V
IN
Input Voltage
-1.0 to +4.6
V
OUT
Output Voltage
-1.0 to +4.6
T
OPR
Operating Temperature
0 to +70
°
C
1
T
STG
Storage Temperature
-55 to +125
°
C
1
P
D
Power Dissipation
2, 2MB / 4, 4MB
W
1
I
OUT
Short Circuit Output Current
50
mA
1
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Recommended DC Operating Conditions
(T
A
= 0 to 70C)
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
V
CC
Supply Voltage
3.0
3.3
3.6
V
1
V
IH
Input High Voltage
2.0
—
V
CC
+ 0.3
V
1
V
IL
Input Low Voltage
-0.3
—
0.8
V
1
1. All voltages referenced to V
SS
.
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