參數(shù)資料
型號： IBM3209K3114
廠商： IBM Microeletronics
英文描述： IBM Packet Routing Switch Serial Interface Converter(IBM封裝路線選擇開關串行接口轉(zhuǎn)換器)
中文描述： IBM的分組路由交換機串行接口轉(zhuǎn)換器（IBM的封裝路線選擇開關串行接口轉(zhuǎn)換器）
文件頁數(shù)： 124/152頁
文件大?。?/td> 2390K
代理商： IBM3209K3114
IBM3209K3114
IBM Packet Routing Switch Serial Interface Converter
Advance
Electrical Specifications
Page 114 of 142
prssi.01
July 12, 2000
8. Electrical Specifications
8.1 Power Sequencing
In order to prevent latchup (and destruction) of the chip, the power supplies must be sequenced up and down
in a manner that any supply is greater than or equal to the voltage of another supply of lesser value both
during "turn on" and "turn off" (including a quick toff - ton sequence).
For example, 3.3 V >/= 2.5 >/= 1.5 V during power up and power down. Actually up to 400 mV of negative
voltage can be tolerated during the sequence between any two supplies. There is no time delay requirement,
only a negative voltage restriction. Ideally, all supplies would rise together until they reach their operating
level and all would fall together until they reach zero.
If one could design a 400 mV (max) diode and place it between 3.3 V (cathode) and 2.5 V (anode), and
another between 2.5 V (cathode) and 1.5 V (anode), that would ensure that the 400mV diodes internal to the
chip did not get forward biased more than the 400 mV, which would keep the chip out of latchup conditions.
Also, the 3.3 V supply should not exceed the 2.5 V supply by more than 2.7 V during power up/down, and
1.3V in constant use.
Table 32: Absolute Maximum Ratings
Parameter
Description
Min
Typ
Max
Units
V
DD
Supply voltage VDD
-0.5
2.5
2.7
V
V
IN
Input voltage
-0.5
V
DD+0.6
V
V
OUT
Output voltage
-0.5
V
DD+0.6
V
Thermal impedance junction to ambient package
Airflow=0
14.7
°
C/W
Thermal impedance junction to ambient package
Airflow=100FPM
13.3
°
C/W
Thermal impedance junction to ambient package
Airflow=200FPM
11.9
°
C/W
Thermal impedance junction to case package
1.9
°
C/W
T
S
Storage temperature
-65
150
°
C
T
A
Operating junction temperature range
0
125
°
C
Electrostatic discharge
-3.000
6,000
3,000
V
Note:
Permanent device damage may occur if the above absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational section of this data sheet. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
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