參數(shù)資料
型號(hào)： IBMN312164CT3
廠商： IBM Microeletronics
英文描述： 128Mb(8Mbit x 4 I/O x 4 Bank) Synchronous DRAM(128M位(8M位 x 4 I/O x 4 組)同步動(dòng)態(tài)RAM)
中文描述： 128Mb的（8Mbit × 4的I / O × 4行）同步DRAM（128兆位（800萬位× 4的I / O × 4組）同步動(dòng)態(tài)RAM）的
文件頁(yè)數(shù)： 27/66頁(yè)
文件大小： 1696K
代理商： IBMN312164CT3
IBMN312164CT3
IBMN312804CT3
IBMN312404CT3
Preliminary
128Mb Synchronous DRAM - Die Revision B
06K7582.H03335A
10/00
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 27 of 66
Data Mask
The SDRAM has a Data Mask function that can be used in conjunction with data read and write cycles. When
the Data Mask is activated (DQM high) during a write cycle, the write operation is prohibited immediately
(zero clock latency). If the Data Mask is activated during a read cycle, the data outputs are disabled and
become high impedance after a two-clock delay, independent of CAS latency.
No Operation Command
The No Operation Command should be used in cases when the SDRAM is in an idle or a wait state. The pur-
pose of the No Operation Command is to prevent the SDRAM from registering any unwanted commands
between operations. A No Operation Command is registered when CS is low with RAS, CAS, and WE held
high at the rising edge of the clock. A No Operation Command will not terminate a previous operation that is
still executing, such as a burst read or write cycle.
Deselect Command
The Deselect Command performs the same function as a No Operation Command. Deselect Command
occurs when CS is brought high, the RAS, CAS, and WE signals become don’t cares.
Data Mask Activated during a Read Cycle
COMMAND
NOP
READ A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQM
: “H” or “L”
A two-clock delay before
the DQs become Hi-Z
DQs
CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
DOUT A
0
DOUT A
1
(Burst Length = 4, CAS Latency = 2)
相關(guān)PDF資料
PDF描述
IBMN325404CT3 256Mb（4Mbit x 16 I/O x 4 Bank） Synchronous DRAM(256M位（4M位 x 16 I/O x 4 組）同步動(dòng)態(tài)RAM)
IBMN325804CT3 256Mb（8Mbit x 8 I/O x 4 Bank） Synchronous DRAM(256M位（8M位 x 8 I/O x 4 組）同步動(dòng)態(tài)RAM)
IBMN325164CT3 256Mb（16Mbit x 4 I/O x 4 Bank） Synchronous DRAM(256M位（16M位 x 4 I/O x 4 組）同步動(dòng)態(tài)RAM)
IBMN612404GT3B 128Mb Double Data Rate Synchronous DRAM(128M位高速CMOS同步動(dòng)態(tài)RAM（采用雙數(shù)據(jù)速率結(jié)構(gòu)）)
IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM(128M位高速CMOS同步動(dòng)態(tài)RAM（采用雙數(shù)據(jù)速率結(jié)構(gòu)）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBMN364164CT3C360 制造商:IBM 功能描述:*
IBMPPC403GAJC33C1 制造商:IBM 功能描述:
IBMPPC750CLGEQ4023 制造商:IBM 功能描述:MPU 750CL RISC 32BIT 90NM 400MHZ 1.15V/1.8V 278FCBGA - Trays
IBMPPC750CLGEQ5023 制造商:IBM Microelectronics 功能描述:MPU 750CL RISC 32BIT 90NM 500MHZ 1.15V/1.8V 278FCBGA - Trays
IBMPPC750CLGEQA033 制造商:IBM 功能描述:MPU 750CL RISC 32BIT 90NM 1GHZ 1.15V/1.8V 278FCBGA - Trays 制造商:IBM 功能描述:IBMIBMPPC750CLGEQA033 CPU PPC 750CL 1GHZ
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*