參數(shù)資料
型號: IBMN325164CT3
廠商: IBM Microeletronics
英文描述: 256Mb(16Mbit x 4 I/O x 4 Bank) Synchronous DRAM(256M位(16M位 x 4 I/O x 4 組)同步動態(tài)RAM)
中文描述: 256Mb的(16兆× 4的I / O × 4行)同步DRAM(256M位(1,600位× 4的I / O × 4組)同步動態(tài)RAM)的
文件頁數(shù): 23/66頁
文件大?。?/td> 1699K
代理商: IBMN325164CT3
IBMN325164CT3
IBMN325804CT3
IBMN325404CT3
Preliminary
256Mb Synchronous DRAM - Die Revision B
06K0608.F39375A
10/00
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 23 of 66
Precharge Termination
The Precharge Command may be used to terminate either a burst read or burst write operation. When the
Precharge command is issued, the burst operation is terminated and bank precharge begins. For burst read
operations, valid data will continue to appear on the data bus as a function of CAS Latency.
Burst Read Interrupted by Precharge
COMMAND
READ Ax
0
NOP
NOP
NOP
NOP
NOP
*
NOP
NOP
t
CK2
,
DQs
CAS latency = 2
CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
DOUT Ax
0
DOUT Ax
1
DOUT Ax
2
DOUT Ax
3
Precharge A
t
CK3
,
DQs
CAS latency = 3
DOUT Ax
0
DOUT Ax
1
DOUT Ax
2
DOUT Ax
3
t
RP
t
RP
*
Bank A can be reactivated at completion of t
.
t
is a function of clock cycle time and speed sort.
*
See the Clock Frequency and Latency table.
(Burst Length = 8, CAS Latency = 2, 3)
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